0402YK0R9ABWTR datasheet, PDF - EEWORLD Datasheet

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0402YK0R9ABWTR: DescriptionFilm Capacitor, Silicon Dioxide And Nitride, 16V, 5.5556% +Tol, 5.5556% -Tol, -/+60ppm/Cel TC, 0.0000009uF, Surface Mount, 0402, CHIP; CategoryPassive components capacitor; File Size2MB，26 Pages; ManufacturerAVX

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0402YK0R9ABWTR Overview

Film Capacitor, Silicon Dioxide And Nitride, 16V, 5.5556% +Tol, 5.5556% -Tol, -/+60ppm/Cel TC, 0.0000009uF, Surface Mount, 0402, CHIP

0402YK0R9ABWTR Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1808364264
package instruction	, 0402
Reach Compliance Code	not_compliant
ECCN code	EAR99
YTEOL	4.88
capacitance	9e-7 µF
Capacitor type	FILM CAPACITOR
dielectric materials	SILICON DIOXIDE AND OXYNITRIDE
high	0.4 mm
JESD-609 code	e0
length	1 mm
Installation features	SURFACE MOUNT
negative tolerance	5.56%
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Package shape	RECTANGULAR PACKAGE
Package form	SMT
method of packing	TR, 7/13 INCH
positive tolerance	5.56%
Rated (DC) voltage (URdc)	16 V
Guideline	AEC-Q200
size code	0402
surface mount	YES
Temperature Coefficient	60ppm/Cel ppm/°C
Terminal surface	Tin/Lead (Sn/Pb)
Terminal shape	WRAPAROUND
width	0.55 mm

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Accu-P

Thin-Film Technology

THE IDEAL CAPACITOR

The non-ideal characteristics of a real capacitor can be ignored at

low frequencies. Physical size imparts inductance to the capacitor

and dielectric and metal electrodes result in resistive losses, but

these often are of negligible effect on the circuit. At the very high

frequencies of radio communication (>100MHz) and satellite

systems (>1GHz), these effects become important. Recognizing

that a real capacitor will exhibit inductive and resistive impedances

in addition to capacitance, the ideal capacitor for these high

frequencies is an ultra low loss component which can be fully

characterized in all parameters with total repeatability from unit

to unit.

Until recently, most high frequency/microwave capacitors were

based on fired-ceramic (porcelain) technology. Layers of ceramic

dielectric material and metal alloy electrode paste are interleaved

and then sintered in a high temperature oven. This technology

exhibits component variability in dielectric quality (losses, dielectric

constant and insulation resistance), variability in electrode

conductivity and variability in physical size (affecting inductance).

An alternate thin-film technology has been developed which

virtually eliminates these variances. It is this technology which has

been fully incorporated into Accu-P

and Accu-P

to provide high

frequency capacitors exhibiting truly ideal characteristics.

The main features of Accu-P

may be summarized as follows:

• High purity of electrodes for very low and repeatable ESR.

• Highly pure, low-K dielectric for high breakdown field, high

insulation resistance and low losses to frequencies above

40GHz.

• Very tight dimensional control for uniform inductance, unit

to unit.

• Very tight capacitance tolerances for high frequency signal

applications.

This accuracy sets apart these Thin-Film capacitors from

ceramic capacitors so that the term Accu has been employed

as the designation for this series of devices, an abbreviation for

“accurate.”

THIN-FILM TECHNOLOGY

Thin-film technology is commonly used in producing

semiconductor devices. In the last two decades, this technology

has developed tremendously, both in performance and in process

control. Today’s techniques enable line definitions of below 1μm,

and the controlling of thickness of layers at 100Å (10-2μm).

Applying this technology to the manufacture of capacitors has

enabled the development of components where both electrical

and physical properties can be tightly controlled.

The thin-film production facilities at AVX consist of:

• Class 1000 clean rooms, with working areas under laminar-

flow hoods of class 100, (below 100 particles per cubic foot

larger than 0.5μm).

• High vacuum metal deposition systems for high-purity

electrode construction.

• Photolithography equipment for line definition down to

2.0μm accuracy.

• Plasma-enhanced CVD for various dielectric depositions

(CVD=Chemical Vapor Deposition).

• High accuracy, microprocessor-controlled dicing saws for

chip separation.

• High speed, high accuracy sorting to ensure strict tolerance

adherence.

Orientation Marking

Alumina (Al

)

Seal

(SiNO)

Dielectric (SiO

/ SiNO)

Electrode

Alumina (Al

)

Terminations

ACCU-P® CAPACITOR STRUCTURE

The Important Information/Disclaimer is incorporated in these specifications

by reference and should be reviewed in full before placing any order.

012419

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