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0402ZJ0R9PBSTR

Description
Film Capacitor, Silicon Dioxide And Nitride, 10V, 2.2222% +Tol, 2.2222% -Tol, -/+30ppm/Cel TC, 0.0000009uF, Surface Mount, 0402, CHIP, ROHS COMPLIANT
CategoryPassive components    capacitor   
File Size2MB,26 Pages
ManufacturerAVX
Environmental Compliance  
Download Datasheet Parametric View All

0402ZJ0R9PBSTR Overview

Film Capacitor, Silicon Dioxide And Nitride, 10V, 2.2222% +Tol, 2.2222% -Tol, -/+30ppm/Cel TC, 0.0000009uF, Surface Mount, 0402, CHIP, ROHS COMPLIANT

0402ZJ0R9PBSTR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid2117168858
package instruction, 0402
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL6.5
capacitance9e-7 µF
Capacitor typeFILM CAPACITOR
dielectric materialsSILICON DIOXIDE AND OXYNITRIDE
high0.4 mm
JESD-609 codee3
length1 mm
Installation featuresSURFACE MOUNT
negative tolerance2.22%
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package shapeRECTANGULAR PACKAGE
Package formSMT
method of packingTR, 7/13 INCH
positive tolerance2.22%
Rated (DC) voltage (URdc)10 V
GuidelineAEC-Q200
size code0402
surface mountYES
Temperature Coefficient30ppm/Cel ppm/°C
Terminal surfaceTin (Sn) - with Nickel (Ni) barrier
Terminal shapeWRAPAROUND
width0.55 mm
Accu-P
®
Thin-Film Technology
THE IDEAL CAPACITOR
The non-ideal characteristics of a real capacitor can be ignored at
low frequencies. Physical size imparts inductance to the capacitor
and dielectric and metal electrodes result in resistive losses, but
these often are of negligible effect on the circuit. At the very high
frequencies of radio communication (>100MHz) and satellite
systems (>1GHz), these effects become important. Recognizing
that a real capacitor will exhibit inductive and resistive impedances
in addition to capacitance, the ideal capacitor for these high
frequencies is an ultra low loss component which can be fully
characterized in all parameters with total repeatability from unit
to unit.
Until recently, most high frequency/microwave capacitors were
based on fired-ceramic (porcelain) technology. Layers of ceramic
dielectric material and metal alloy electrode paste are interleaved
and then sintered in a high temperature oven. This technology
exhibits component variability in dielectric quality (losses, dielectric
constant and insulation resistance), variability in electrode
conductivity and variability in physical size (affecting inductance).
An alternate thin-film technology has been developed which
virtually eliminates these variances. It is this technology which has
been fully incorporated into Accu-P
®
and Accu-P
®
to provide high
frequency capacitors exhibiting truly ideal characteristics.
The main features of Accu-P
®
may be summarized as follows:
• High purity of electrodes for very low and repeatable ESR.
• Highly pure, low-K dielectric for high breakdown field, high
insulation resistance and low losses to frequencies above
40GHz.
• Very tight dimensional control for uniform inductance, unit
to unit.
• Very tight capacitance tolerances for high frequency signal
applications.
This accuracy sets apart these Thin-Film capacitors from
ceramic capacitors so that the term Accu has been employed
as the designation for this series of devices, an abbreviation for
“accurate.”
THIN-FILM TECHNOLOGY
Thin-film technology is commonly used in producing
semiconductor devices. In the last two decades, this technology
has developed tremendously, both in performance and in process
control. Today’s techniques enable line definitions of below 1μm,
and the controlling of thickness of layers at 100Å (10-2μm).
Applying this technology to the manufacture of capacitors has
enabled the development of components where both electrical
and physical properties can be tightly controlled.
The thin-film production facilities at AVX consist of:
• Class 1000 clean rooms, with working areas under laminar-
flow hoods of class 100, (below 100 particles per cubic foot
larger than 0.5μm).
• High vacuum metal deposition systems for high-purity
electrode construction.
• Photolithography equipment for line definition down to
2.0μm accuracy.
• Plasma-enhanced CVD for various dielectric depositions
(CVD=Chemical Vapor Deposition).
• High accuracy, microprocessor-controlled dicing saws for
chip separation.
• High speed, high accuracy sorting to ensure strict tolerance
adherence.
Orientation Marking
Alumina (Al
2
O
3
)
Seal
(SiNO)
Dielectric (SiO
2
/ SiNO)
Electrode
Electrode
Alumina (Al
2
O
3
)
Terminations
ACCU-P® CAPACITOR STRUCTURE
2
The Important Information/Disclaimer is incorporated in these specifications
by reference and should be reviewed in full before placing any order.
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