BTA204S series D, E and F
Three-quadrant triacs guaranteed commutation
Rev. 05 — 16 February 2006
Product data sheet
1. Product profile
1.1 General description
Passivated guaranteed commutation triacs in a SOT428 (DPAK) plastic package intended
for use in motor control circuits or with other highly inductive loads. These devices balance
the requirements of commutation performance and gate sensitivity. The “logic level” D
series is intended for interfacing with low power drivers, including microcontrollers.
1.2 Features
s
High gate sensitivity
s
Guaranteed commutation capability
1.3 Applications
s
Motor control
s
Industrial and domestic heating
1.4 Quick reference data
s
s
s
s
s
V
DRM
≤
600 V (BTA204S-600D)
V
DRM
≤
600 V (BTA204S-600E)
V
DRM
≤
600 V (BTA204S-600F))
V
DRM
≤
800 V (BTA204S-800E)
I
TSM
≤
25 A (t = 20 ms)
s
s
s
s
I
T(RMS)
≤
4 A
I
GT
≤
5 mA (BTA204S-600D)
I
GT
≤
10 mA (BTA204S-600E_800E)
I
GT
≤
25 mA (BTA204S-600F)
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base
[1]
Simplified outline
mb
Symbol
T2
sym051
T1
G
2
1
3
SOT428 (DPAK)
[1]
Connected to main terminal 2 (T2)
Philips Semiconductors
BTA204S series D, E and F
Three-quadrant triacs guaranteed commutation
3. Ordering information
Table 2:
Ordering information
Package
Name
BTA204S-600D
BTA204S-600E
BTA204S-600F
BTA204S-800E
DPAK
Description
plastic single-ended surface mounted package (DPAK); 3 leads (one lead
cropped)
Version
SOT428
Type number
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
Parameter
repetitive peak off-state voltage
Conditions
BTA204S-600D
BTA204S-600E
BTA204S-600F
BTA204S-800E
I
T(RMS)
I
TSM
RMS on-state current
non-repetitive peak on-state current
full sine wave; T
mb
≤
107
°C;
see
Figure 4
and
5
full sine wave; T
j
= 25
°C
prior to
surge; see
Figure 2
and
3
t = 20 ms
t = 16.7 ms
I
2
t
dl
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
Max
600
600
600
800
4
Unit
V
V
V
V
A
-
-
-
-
-
-
-
25
27
3.1
100
2
5
5
0.5
+150
125
A
A
A
2
s
A/µs
A
V
W
W
°C
°C
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
t = 10 ms
I
TM
= 6 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
over any 20 ms period
-
−40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/µs.
BTA204S_SER_D_E_F_5
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2006
2 of 13
Philips Semiconductors
BTA204S series D, E and F
Three-quadrant triacs guaranteed commutation
8
P
tot
(W)
6
α
α
001aac660
101
T
mb(max)
104 (°C)
107
110
113
116
α
= 180
120
90
60
30
4
2
119
122
0
0
1
2
3
4
I
T(RMS)
(A)
5
125
α
= conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
30
I
T
I
TSM
(A)
20
001aac331
I
TSM
t
T
T
j(init)
= 25
°C
max
10
0
1
10
10
2
n
10
3
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA204S_SER_D_E_F_5
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2006
3 of 13
Philips Semiconductors
BTA204S series D, E and F
Three-quadrant triacs guaranteed commutation
10
3
I
T
I
TSM
(A)
001aac330
I
TSM
t
T
T
j(init)
= 25
°C
max
10
2
(2)
(1)
10
10
−5
10
−4
10
−3
10
−2
t (s)
10
−1
t
p
≤
20 ms
(1) dI
T
/dt limit
(2) T2− G+ quadrant
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values
001aac333
12
I
T(RMS)
(A)
8
5
I
T(RMS)
(A)
4
001aac662
107
°C
3
2
4
1
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
T
mb
(°C)
150
f = 50 Hz; T
mb
≤
107
°C
(1) T
mb
≤
107
°C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values
BTA204S_SER_D_E_F_5
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2006
4 of 13
Philips Semiconductors
BTA204S series D, E and F
Three-quadrant triacs guaranteed commutation
5. Thermal characteristics
Table 4:
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
-
-
-
Typ
-
-
75
Max
3.0
3.7
-
Unit
K/W
K/W
K/W
thermal resistance from junction to full cycle; see
Figure 6
mounting base
half cycle; see
Figure 6
thermal resistance from junction to printed-circuit board
ambient
(FR4) mounted; see
Figure 13
10
Z
th(j−mb)
(K/W)
1
(1)
(2)
001aac681
10
−1
P
10
−2
t
p
t
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(S)
10
(1) Unidirectional
(2) Bidirectional
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
BTA204S_SER_D_E_F_5
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2006
5 of 13
京公网安备 11010802033920号
EEWORLD
