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3B4B41

Description
DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size53KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

3B4B41 Overview

DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode

3B4B41 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionS-PUFM-W4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeS-PUFM-W4
JESD-609 codee0
Maximum non-repetitive peak forward current88 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse current0.00001 µA
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationUPPER
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