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3MN03SF

Description
TRANSISTOR,BJT,NPN,20V V(BR)CEO,30MA I(C),EMD3VAR
CategoryDiscrete semiconductor    The transistor   
File Size24KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

3MN03SF Overview

TRANSISTOR,BJT,NPN,20V V(BR)CEO,30MA I(C),EMD3VAR

3MN03SF Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompliant
Maximum collector current (IC)0.03 A
ConfigurationSingle
Minimum DC current gain (hFE)60
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
surface mountNO
Nominal transition frequency (fT)200 MHz
Base Number Matches1
Ordering number : EN8651A
3MN03SF
NPN Epitaxial Planar Silicon Transistor
3MN03SF
Features
High-Frequency General-Purpose
Amplifier Applications
Small package allows applied sets to be made small and thin.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Mounted on a ceramic board (600mm
!
0.8mm)
2
Conditions
Ratings
30
20
5
30
150
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Reverse Transfer Capacitance
Noise Figure
Symbol
ICBO
IEBO
hFE
fT
Cre
NF
Conditions
VCB=10V, IE=0A
VEB=4V, IC=0A
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VCB=6V, f=1MHz
VCE=6V, IC=1mA, f=100MHz
60
200
320
0.8
3.0
1.3
Ratings
min
typ
max
0.1
0.1
200
MHz
pF
dB
Unit
µA
µA
Marking : WA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32406 MS IM TB-00002142 / D2805AA MS IM TB-00001950 No.8651-1/4
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