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3DFO4G16VB2408MSY-00

Description
Flash, 256MX16, PBGA64, BGA-64
Categorystorage    storage   
File Size170KB,2 Pages
Manufacturer3D PLUS
Download Datasheet Parametric View All

3DFO4G16VB2408MSY-00 Overview

Flash, 256MX16, PBGA64, BGA-64

3DFO4G16VB2408MSY-00 Parametric

Parameter NameAttribute value
Objectid1383375601
package instructionBGA-64
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Other featuresSEATED HGT NOMINAL
JESD-30 codeR-PBGA-B64
length13.7 mm
memory density4294967296 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals64
word count268435456 words
character code256000000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize256MX16
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Programming voltage2.7 V
Maximum seat height3.9 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
typeNOR TYPE
width11.7 mm
MEMORY MODULE
NOR FLASH 256Mx16-BGA
Flash Memory
MODULE
3DFO4G16VB2408
4Gbit Nor Flash organized as 258Mx16, based on 128Mx16
Pin Assignment (Top View)
BGA 64
Features
- Single supply for read/program/erase (2.7V to 3.6V)
- V
IO
= V
CC
= 2.7 to 3.6V
- x16 data bus
- 16-word/32-byte page read buffer
- 512-byte programming buffer
- Uniform 128-Kbytes sector architecture
- Suspend and Resume commands for Program and Erase
Operations
- Separate 1024-byte OTP array
- Protection methods for each sector
- Highest address sector protected
- WP#/ACC input for accelerated programming time
- Maximum read access times
Random Access Time: 110 ns
Page Access Time: 20 ns
CE# Access Time: 110 ns
OE# Access Time: 25 ns
- 100,000 erase cycles per sector typical
- 20-year data retention typical
- Available Temperature Range:
0°C to 70°C
-40°C to +85°C
-55°C to +125°C
Block Diagram
CE#
CE2#
1
2
128Mx16
All other signals are common to all memories
General Description
The 3DFO4G16VB2408 is a 3.0V single power 4Gbit Flash memory. The device has a 16-bit wide data bus and offers a fast
page access time of 25ns.
It is organized in
2 banks with separate chip enable
(CE#) controls. It requires only a
single 3.0 volt power supply
for both
read and write functions.
In addition to VCC input, a high-voltage
accelerated program
(WP#/ACC) input provides accelerated programming time and
protects first or last sector regardless of sector protection settings. The
Ready/Busy
(RY/BY#) is a dedicated open drain output
pin that detects program or erase cycle completion. The
V
IO
pin
allows the host system to set the voltage levels that the device
generates and tolerates on all inputs and outputs.
Hardware data protection measures include a low V
CC
detector that automatically inhibits write operations during power
transitions. Persistent Sector Protection provides in-system, command-enable protection of any combination of sectors.
Password Sector Protection prevents unauthorized write and erase operations in any combination of sectors through a user-
defined 64-bit password.
This makes the device an ideal product for embedded applications that require higher density, better performance and lower
power consumption.
FLASH Memory Module
3D Plus SA reserves the right to cancel product or specifications without notice
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