Preliminary
K1S3216B1C
Document Title
2Mx16 bit Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0
0.1
Initial Draft
Revised
- Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0
- Changed Standby Current(CMOS) from 80uA to 100uA
Draft Date
January 16, 2003
June 9, 2003
Remark
Advanced
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
-1-
Revision 0.1
June 2003
Preliminary
K1S3216B1C
2M x 16 bit Uni-Transistor CMOS RAM
FEATURES
•
•
•
•
•
•
UtRAM
GENERAL DESCRIPTION
The K1S3216B1C is fabricated by SAMSUNG′s advanced
CMOS technology using one transistor memory cell. The device
supports Industrial temperature range and 48 ball Chip Scale
Package for user flexibility of system design. The device also
supports dual chip selection for user interface.
Process Technology: CMOS
Organization: 2M x16 bit
Power Supply Voltage: 1.7V~2.1V
Three State Outputs
Compatible with Low Power SRAM
Dual Chip selection support
•
Package Type: 48-FBGA-6.0x8.0
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temp.
Vcc Range
Speed
Standby
(I
SB1
, Max.)
100µA
Operating
(I
CC2
, Max.)
30mA
PKG Type
K1S3216B1C-I
Industrial(-40~85°C)
1.7V~2.1V
70/85ns
48-FBGA-6.0x8.0
PIN DESCRIPTION
1
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
A
LB
OE
A0
A1
A2
CS
2
Vcc
Vss
B
I/O9
UB
A3
A4
CS
1
I/O1
Row
Addresses
Row
select
Memory array
C
I/O10
I/O11
A5
A6
I/O2
I/O3
D
Vss
I/O12
A17
A7
I/O4
Vcc
I/O
1
~I/O
8
E
Vcc
I/O13
NC
A16
I/O5
Vss
I/O
9
~I/O
16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
F
I/O15
I/O14
A14
A15
I/O6
I/O7
G
I/O16
A19
A12
A13
WE
I/O8
Column Addresses
H
A18
A8
A9
A10
A11
A20
CS
1
CS
2
OE
WE
UB
LB
48-FBGA: Top View(Ball Down)
Control Logic
Name
CS
1
,CS
2
OE
WE
A
0
~A
20
Function
Chip Select Inputs
Output Enable Input
Write Enable Input
Address Inputs
Name
Vcc
Vss
UB
LB
NC
Function
Power
Ground
Upper Byte(I/O
9
~
16
)
Lower Byte(I/O
1
~
8
)
No Connection
1)
I/O
1
~I/O
16
Data Inputs/Outputs
1) Reserved for future use.
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
-2-
Revision 0.1
June 2003
Preliminary
K1S3216B1C
POWER UP SEQUENCE
1. Apply power.
2. Maintain stable power(Vcc min.=1.7V) for a minimum 200µs with CS1=high.or CS2=low.
UtRAM
TIMING WAVEFORM OF POWER UP(1)
(CS
1
controlled)
V
CC(Min)
V
CC
Min. 200µs
≈
≈
CS
1
≈ ≈
CS
2
Power Up Mode
POWER UP(1)
Normal Operation
1. After V
CC
reaches V
CC
(Min.), wait 200µs with CS
1
high. Then the device gets into the normal operation.
TIMING WAVEFORM OF POWER UP(2)
(CS
2
controlled)
V
CC(Min)
V
CC
Min. 200µs
≈
≈ ≈
CS
1
CS
2
Power Up Mode
≈
Normal Operation
POWER UP(2)
1. After V
CC
reaches V
CC
(Min.), wait 200µs with CS
2
low. Then the device gets into the normal operation.
-3-
Revision 0.1
June 2003
Preliminary
K1S3216B1C
FUNCTIONAL DESCRIPTION
CS
1
H
X
1)
X
1)
L
L
L
L
L
L
L
L
CS
2
X
1)
L
X
1)
H
H
H
H
H
H
H
H
OE
X
1)
X
1)
X
1)
H
H
L
L
L
X
1)
X
1)
X
1)
WE
X
1)
X
1)
X
1)
H
H
H
H
H
L
L
L
LB
X
1)
X
1)
H
L
X
1)
L
H
L
L
H
L
UB
X
1)
X
1)
H
X
1)
L
H
L
L
H
L
L
I/O
1~8
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O
9~16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
UtRAM
Power
Standby
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
1. X means don′t care.(Must be low or high state)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
V
IN
, V
OUT
V
CC
P
D
T
STG
T
A
Ratings
-0.2 to V
CC
+0.3V
-0.2 to 2.5V
1.0
-65 to 150
-40 to 85
Unit
V
V
W
°C
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reli-
ability.
-4-
Revision 0.1
June 2003
Preliminary
K1S3216B1C
PRODUCT LIST
Industrial Temperature Products(-40~85°C)
Part Name
K1S3216B1C-FI70
K1S3216B1C-FI85
Function
48-FBGA, 70ns, 1.8V/2.0V
48-FBGA, 85ns, 1.8V/2.0V
UtRAM
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. T
A
=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width
≤20ns.
3. Undershoot: -1.0V in case of pulse width
≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
V
IH
V
IL
Min
1.7
0
1.4
-0.2
3)
Typ
1.8/2.0
0
-
-
Max
2.1
0
V
CC
+0.2
2)
0.4
Unit
V
V
V
V
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Symbol
Test Conditions
V
IN
=Vss to Vcc
CS
1
=V
IH
or CS
2
=V
IL
or OE=V
IH
or WE=V
IL
or LB=UB=V
IH
,
V
IO
=Vss to Vcc
Cycle time=1µs, 100% duty, I
IO
=0mA, CS
1
≤0.2V,
LB≤0.2V
or/and UB≤0.2V, CS
2
≥
V
CC
-
0.2V, V
IN
≤0.2V
or V
IN
≥
V
CC
-
0.2V
Cycle time=Min, I
IO
=0mA
,
100% duty, CS
1
=V
IL,
CS
2
=
V
IH
LB=V
IL
or/and UB=V
IL
, V
IN
=V
IH
or V
IL
I
OL
= 0.1mA
I
OH
= -0.1mA
Other inputs=0~Vcc
1) CS
1
≥V
CC
-0.2V
,
CS
2
≥
V
CC
-
0.2V(CS
1
controlled) or
2) 0V
≤
CS
2
≤
0.2V(CS
2
controlled)
Min
-1
-1
-
-
-
1.4
-
Typ
-
-
-
-
-
-
-
Max Unit
1
1
5
30
0.2
-
100
µA
µA
mA
mA
V
V
µA
I
LI
I
LO
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
Standby Current(CMOS)
V
OL
V
OH
I
SB1
-5-
Revision 0.1
June 2003
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