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M58LR128KT85ZB6E

Description
IC flash 128mbit 85ns 56vfbga
Categorystorage   
File Size2MB,121 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance  
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M58LR128KT85ZB6E Overview

IC flash 128mbit 85ns 56vfbga

M58LR128KT M58LR128KB
M58LR256KT M58LR256KB
128 or 256 Mbit (x16, multiple bank, multilevel interface, burst)
1.8 V supply flash memories
Features
Supply voltage
– V
DD
= 1.7 V to 2.0 V for program, erase
and read
– V
DDQ
= 1.7 V to 2.0 V for I/O buffers
– V
PP
= 9 V for fast program
Synchronous/asynchronous read
– Synchronous burst read mode:
54 MHz, 66 MHz
– Asynchronous page read mode
– Random access: 70 ns, 85 ns
Synchronous burst read suspend
Programming time
– 2.5
μs
typical word program time using
Buffer Enhanced Factory Program
command
Memory organization
– Multiple bank memory array:
8 Mbit banks for the M58LR128KT/B
16 Mbit banks for the M58LR256KT/B
– Parameter blocks (top or bottom location)
Dual operations
– Program/erase in one bank while read in
others
– No delay between read and write
operations
Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP for block lock-down
– Absolute write protection with V
PP
= V
SS
FBGA
VFBGA56 (ZB) 7.7 x 9 mm
VFBGA79 (ZC) 9 x 11 mm
TFBGA88 (ZQ) 8 x 10 mm
Security
– 64 bit unique device number
– 2112 bit user programmable OTP cells
Common flash interface (CFI)
100,000 program/erase cycles per block
Electronic signature
– Manufacturer code: 20h
– Top device codes:
M58LR128KT: 88C4h
M58LR256KT: 880Dh
– Bottom device codes
M58LR128KB: 88C5h
M58LR256KB: 880Eh
The M58LR128KT/B is available in the
ECOPACK-compliant VFBGA56 package.
The M58LR256KT/B is available in the
ECOPACK-compliant VFBGA79 and
TFBGA88 packages.
October 2008
Rev 6
1/120
www.numonyx.com
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