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30KPA198CB

Description
Trans Voltage Suppressor Diode, 30000W, 198V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size885KB,6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
Download Datasheet Parametric View All

30KPA198CB Overview

Trans Voltage Suppressor Diode, 30000W, 198V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

30KPA198CB Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instructionROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage221.2 V
Shell connectionISOLATED
Maximum clamping voltage319.8 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)250
polarityBIDIRECTIONAL
Maximum power dissipation8 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage198 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperature40
Base Number Matches1
Transient Voltage Suppression Diodes
Axial Leaded – 30000W > 30KPA series
30KPA Series
Description
Uni-directional
RoHS
The 30KPA Series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
V
BR
@T
J
= V
BR
@25°C × (1+
α
T
x (T
J
- 25))
(αT:
Temperature Coefficient)
Bi-directional
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25°C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation by
10/1000μs Test Waveform (Fig.1)
(Note 1)
Steady State Power Dissipation on
Inifinite Heat Sink at T
L
=75ºC (Fig. 5)
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave Unidirectional
Only (Note 2)
Operating Junction and Storage
Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
T
J
, T
STG
R
uJL
R
uJA
Value
30000
8.0
400
-55 to 150
8.0
40
Unit
W
W
A
°C
°C/W
°C/W
• Glass passivated chip
junction in P600 package
• 30000W peak pulse
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• Fast response time:
typically less than 1.0ps
from 0 Volts to BV min
• Excellent clamping
capability
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
15kV(Air), 8kV (Contact)
• ESD protection of data
lines in accordance with
IEC 61000-4-2 (IEC801-2)
• EFT protection of data
lines in accordance with
IEC 61000-4-4 (IEC801-4)
• Low incremental surge
resistance
• Typical I
R
less than 2μA
above 73V
• High temperature
soldering guaranteed:
260°C/40 seconds /
0.375”
,(9.5mm) lead
length, 5 lbs., (2.3kg)
tension
• Plastic package has
underwriters laboratory
flammability classification
94V-O
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
Applications
TVS devices are ideal for the protection of I/O interfaces,
V
CC
bus and other vulnerable circuits used in telecom,
computer, industrial and consumer electronic applications.
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
A
= 25°C per Fig. 3.
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per
minute maximum.
Functional Diagram
Additional Information
Bi-directional
Datasheet
Resources
Samples
Cathode
Uni-directional
Anode
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/13/13
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