Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
| Parameter Name | Attribute value |
| Maker | SIEMENS |
| Parts packaging code | SOT-23 |
| package instruction | SOT-23, 3 PIN |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 50 V |
| Maximum drain current (ID) | 0.22 A |
| Maximum drain-source on-resistance | 6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 8 pF |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| BSS138E6327 | BSS138E-6327 | BSS138E6433 | |
|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | 220 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN |
| Maker | SIEMENS | SIEMENS | SIEMENS |
| Parts packaging code | SOT-23 | SOT-23 | SOT-23 |
| package instruction | SOT-23, 3 PIN | CYLINDRICAL, O-PBCY-T3 | SOT-23, 3 PIN |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 50 V | 50 V | 50 V |
| Maximum drain current (ID) | 0.22 A | 0.22 A | 0.22 A |
| Maximum drain-source on-resistance | 6 Ω | 3.5 Ω | 6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G3 | O-PBCY-T3 | R-PDSO-G3 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | CYLINDRICAL | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | NO | YES |
| Terminal form | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | BOTTOM | DUAL |
| Transistor component materials | SILICON | SILICON | SILICON |
| ECCN code | EAR99 | - | EAR99 |
| Other features | LOGIC LEVEL COMPATIBLE | - | LOGIC LEVEL COMPATIBLE |
| Maximum feedback capacitance (Crss) | 8 pF | - | 8 pF |
| transistor applications | SWITCHING | - | SWITCHING |
| Base Number Matches | 1 | 1 | - |
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