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550PEF10V30

Description
Silicon Controlled Rectifier, 550000mA I(T), 100V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size810KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

550PEF10V30 Overview

Silicon Controlled Rectifier, 550000mA I(T), 100V V(DRM)

550PEF10V30 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1156924976
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time25 µs
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current600 mA
Maximum leakage current30 mA
On-state non-repetitive peak current6600 A
Maximum on-state current550000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage100 V
surface mountNO
Trigger device typeSCR
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