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BZW03-C430T/R

Description
DIODE 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size54KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BZW03-C430T/R Overview

DIODE 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

BZW03-C430T/R Parametric

Parameter NameAttribute value
MakerNXP
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage400 V
Breakdown voltage nominal value360 V
Shell connectionISOLATED
Maximum clamping voltage603 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeE-LALF-W2
Maximum non-repetitive peak reverse power dissipation500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1.75 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage430 V
Maximum reverse current10 µA
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BZW03 series
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 May 14
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