ESD752DBZR datasheet, PDF - EEWORLD Datasheet

ESD752DBZR: DescriptionDual, 3-pF, ±24-V, ±30-kV ESD protection diode with 8/20-µS surge 3-SOT-23 -55 to 150; CategoryDiscrete semiconductor diode; File Size2MB，24 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/; Environmental Compliance

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ESD752DBZR Overview

Dual, 3-pF, ±24-V, ±30-kV ESD protection diode with 8/20-µS surge 3-SOT-23 -55 to 150

Parameter Name	Attribute value
Brand Name	Texas Instruments
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Objectid	145613599356
package instruction	SOT-23, 3 PIN
Reach Compliance Code	compliant
Country Of Origin	Philippines
Samacsys Description	ESD752DBZR
Samacsys Manufacturer	Texas Instruments
Samacsys Modified On	2023-08-29 03:08:10
YTEOL	15
Maximum breakdown voltage	35.5 V
Minimum breakdown voltage	25.5 V
Breakdown voltage nominal value	30.5 V
Maximum clamping voltage	33 V
Configuration	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-G3
JESD-609 code	e4
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	210 W
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	BIDIRECTIONAL
Guideline	IEC-61000-4-2, 4-5; IEC-62026-3
Maximum repetitive peak reverse voltage	24 V
Maximum reverse current	0.05 µA
Reverse test voltage	24 V
surface mount	YES
technology	AVALANCHE
Terminal surface	NICKEL PALLADIUM GOLD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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