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IBM014400BJ1-70

Description
Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
Categorystorage    storage   
File Size270KB,25 Pages
ManufacturerIBM
Websitehttp://www.ibm.com
Download Datasheet Parametric View All

IBM014400BJ1-70 Overview

Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20

IBM014400BJ1-70 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIBM
Parts packaging codeSOJ
package instructionSOJ, SOJ20/26,.34
Contacts20
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time70 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-J20
JESD-609 codee0
length17.145 mm
memory density4194304 bit
Memory IC TypeFAST PAGE DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals20
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ20/26,.34
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle1024
Maximum seat height3.75 mm
self refreshNO
Maximum standby current0.001 A
Maximum slew rate0.08 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
Base Number Matches1
IBM0144001M x 410/10, 5.0V. IBM014400P1M x 410/10, 3.3V, LP, SR. IBM014400M1M x 410/10, 5.0V, LP, SR. IBM014400B1M x 410/10, 3.3V.
IBM014400 IBM014400M
IBM014400B IBM014400P
1M x 4 10/10 DRAM
Features
• 1,048,576 word by 4 bit organization
• Power Supply: 3.3
±
0.3V or 5.0
±
0.5V
• Standard Power (SP) and Low Power (LP)
• 1024 Refresh Cycles
- 16 ms Refresh Rate (SP version)
- 128 ms Refresh Rate (LP version)
• High Performance:
-60
t
RAC
t
CAC
t
AA
t
RC
t
PC
RAS Access Time
CAS Access Time
Column Address Access Time
Cycle Time
Fast Page Mode Cycle Time
60ns
15ns
30ns
110ns
40ns
-70
70ns
18ns
35ns
130ns
40ns
• Power Dissipation
- Active (max)
- 85 mA / 70 mA (5.0V)
- 95 mA / 80 mA (3.3V)
- Standby Current: TTL Inputs (max)
- 2.0 mA (SP version)
- 1.0 mA (LP version)
- Standby Current: CMOS Inputs (max)
- 1.0 mA (SP version)
- 0.15 mA (LP version)
• Fast Page Mode
• RAS Only, and CAS before RAS Refresh
• Hidden Refresh
• Self-Refresh (LP version only)
• Packages: SOJ-26/20 (300mil)
TSOP-26/20 (300mil)
Description
The IBM014400 is a fast-page dynamic RAM orga-
nized 1,048,576 words by 4 bits. The devices are
fabricated in IBM’s 4M-bit Shrink 2 CMOS silicon
gate technology. The circuits and process have
been designed to provide high performance, low
power dissipation, and high reliability. The devices
operate with either a 5.0V
±
0.5V or 3.3V
±
0.3V
power supply and are offered in a plastic 26/20 pin
SOJ (300mil) or TSOP (300mil) package. Refresh-
ing may be accomplished by means of a CAS before
RAS refresh cycle (CBR) that internally generates
the refresh address. RAS - only refresh cycles can
also refresh all memory locations. Self-Refresh
mode is entered by holding RAS low for
100µS
during a CBR cycle. Detection of this long RAS time
during a CBR cycle starts an internal oscillator that
maintains data integrity without external clocking.
Self-Refresh mode is included as a standard feature
for Low Power devices (IBM014400M and
IBM014400P). Self Refresh operating current is
170µA (max) and typically
100µA. All low power
devices support Extended Data Retention of 128ms,
eight times (8x) the retention supported by IBM’s
standard power devices.
Pin Assignments
I/O0
I/O1
WE
RAS
A9
1
2
3
4
5
26
25
24
23
22
Vss
I/O3
I/O2
CAS
OE
Pin Description
A0 - A9
I/O0 - I/O3
RAS
CAS
WE
OE
V
CC
Address Input
Data Input/Output
Row Address Strobe
Column Address Strobe
Read/Write Input
Output Enable
Power (5.0V or 3.3V)
Ground
A0
A1
A2
A3
Vcc
9
10
11
12
13
18
17
16
15
14
A8
A7
A6
A5
A4
V
SS
27H4339
SA14-4219-04
Revised 6/96
©IBM Corporation, 1996. All rights reserved.
Use is further subject to the provisions at the end of this document.
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