FP31QF
2-Watt HFET
Product Features
•
•
•
•
•
•
•
•
50 – 4000 MHz
18 dB Gain @ 900 MHz
+34 dBm P1dB
+46 dBm Output IP3
High Drain Efficiency
Single Voltage Supply
Robust 1000V ESD, Class IC
Lead free/green/RoHS-compliant
6mm 28-pin QFN package
Product Description
The FP31QF is a high performance 2-Watt HFET
(Heterostructure FET) in a low-cost lead-free/RoHS-
compliant 28-pin 6x6 mm QFN (Quad Flatpack, No-
Lead) surface-mount package.
This device works
optimally at a drain bias of +9 V and 450 mA to achieve
+46 dBm output IP3 performance and an output power of
+34 dBm at 1-dB compression.
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The FP31QF has an associated MTTF of a
minimum of 100 years at a mounting temperature of
85°C. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Functional Diagram
GND
GND
GND
GND
28
GND 1
GND 2
GATE / 3
RF IN
GND 4
GND 5
GND 6
GND 7
8
GND
9
GND
10
GND
11
GND
12
GND
13
GND
14
GND
27
GND
23
GND
26
25
24
GND
22
21 GND
20 GND
19 DRAIN /
RF OUT
18 GND
17 GND
16 GND
15 GND
Applications
•
•
•
•
•
•
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Function
Gate /
RF Input
Drain /
RF Output
Ground
Pin No.
3
19
All other pins &
backside copper
Specifications
DC Parameter
Saturated Drain Current, I
dss
Transconductance, G
m
Pinch Off Voltage, V
p (1)
Typical Performance
(4)
Units Min
mA
mS
V
Typ
1170
590
-2.0
Max
Parameter
Frequency
Gain
S11
S22
Output P1dB
Output IP3
(3)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
Units
MHz
dB
dB
dB
dBm
dBm
dB
dBm
dBm
V
mA
915
18
-20
-12
+34
+46
3.5
+27.8
Typical
1960 2140 2450
13.5
13
12
-20
-18
-18
-11
-24
-15
+33.8 +33.2 +33.5
+46.8 +46.6 +46.8
4.5
4.6
4.6
+27.3
+25
+9
450
RF Parameter
(2)
Operational Bandwidth
Test Frequency
Small Signal Gain
Maximum Stable Gain
Output P1dB
Output IP3
(3)
Noise Figure
Units Min
MHz
MHz
dB
dB
dBm
dBm
dB
50
Typ
800
18
24
+34
+46
3.5
Max
4000
W-CDMA Ch. Power
@ -45 dBc ACLR
Drain Voltage
(5)
Drain Current
(5)
1. Pinch-off voltage is measured when I
ds
= 4.8 mA.
2. Test conditions unless otherwise noted: T = 25 ºC, V
DS
= 9 V, I
DQ
= 450 mA, in a tuned
application circuit with Z
L
= Z
LOPT
, Z
S
= Z
SOPT
(optimized for output power).
3. 3OIP measured with two tones at an output power of +18 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
4. Typical parameters represent performance in an application circuit.
5. Empirical measurements showed optimal power performance at a drain voltage = 9 volts at 450 mA.
Because the FP31QF is a discrete device, users can choose their own bias configuration. Performance
may vary from the data shown depending on the biasing conditions. To achieve a minimum 1 million
hours MTTF rating, the biasing condition should maintain a junction temperature below 160
°C
over all
operating temperatures. This can be approximated by (drain voltage) x (drain current) x 17.5
°C/W
+
(maximum operating temperature).
Absolute Maximum Rating
Parameter
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, V
dg
Thermal Resistance, Rth
Junction Temperature
-55 to +125
°C
7.5 W
6 dB above Input P1dB
+16 V
18°C/W
+160°C
Rating
Ordering Information
Part No.
FP31QF-F
FP31QF-PCB900
FP31QF-PCB1900
FP31QF-PCB2140
Description
2-Watt HFET
(lead-free/RoHS-compliant 6mm QFN package)
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 500 pieces on a 7” reel
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 1 of 12 March 2008
FP31QF
2-Watt HFET
S-Parameters (V
DS
= +9 V, I
DS
= 450 mA, T = 25
°C,
calibrated to device leads)
S21, Maximum Stable Gain vs. Frequency
6
0.
Typical Device Data
S11
1.0
0. 8
S22
1.0
6
0.
30
0.
4
Swp Max
6GHz
2.
0
Swp Max
6GHz
2.
0
4
S21, MSG (dB)
0 .2
0
3.
0
4.
5 .0
3
10.0
0.2
0.4
0.6
0.8
1.0
2.0
4.0
5.0
3.0
10 .0
2
1
0
10
-4
.0
- 5.
0
2
DB(|S[2,1]|)
DB(MSG)
- 0.
2
-1 0. 0
0
0
0.5
1
1.5
Frequency (GHz)
2
2.5
3
.4
-0
.4
-0
.0
-2
-0
.6
-0 .8
Note:
Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines.
The S-parameters shown are the de-embedded data down to the device leads and represents typical performance of the device.
Freq (MHz)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
3250
3500
3750
4000
S11 (mag)
S11 (ang)
S21 (mag)
S21 (ang)
S12 (mag)
S12 (ang)
S22 (mag)
0.985
-21.82
24.458
166.25
0.006
76.01
0.096
0.936
-88.63
17.968
128.52
0.020
43.34
0.329
0.913
-128.61
11.520
104.42
0.025
22.03
0.431
0.899
-148.43
8.132
90.03
0.026
10.75
0.465
0.900
-160.54
6.225
79.35
0.026
4.56
0.490
0.900
-169.15
4.988
70.50
0.025
0.35
0.514
0.900
-176.01
4.125
62.56
0.025
-2.975
0.532
0.905
178.53
3.504
55.28
0.024
-4.91
0.560
0.909
172.99
3.046
47.93
0.023
-5.54
0.587
0.910
168.27
2.656
41.65
0.022
-4.44
0.606
0.914
164.14
2.349
34.95
0.021
-1.12
0.629
0.914
160.09
2.117
28.98
0.021
5.24
0.656
0.915
156.76
1.897
23.31
0.022
12.75
0.671
0.922
153.22
1.721
17.69
0.026
23.36
0.695
0.926
149.22
1.563
11.97
0.034
32.54
0.720
0.941
144.67
1.433
6.20
0.058
34.08
0.734
0.943
140.45
1.318
0.98
0.102
23.74
0.768
Device S-parameters are available for download from the website at: http://www.wj.com
S22 (ang)
-110.34
-135.13
-151.01
-158.3
-162.14
-163.92
-166.86
-168.72
-170.95
-172.86
-175.13
-177.13
-179.41
177.36
175.05
171.21
165.82
Load-Pull Data at 1.96 and 2.14 GHz
(V
ds
= 8 V, I
ds
= 500 mA, 25 °C, Z
S
= 50
Ω,
calibrated to device pins)
Freq (GHz)
1.96
2.14
1.0
0.8
ZS (Ω)
5 + j0
5 - j2
P1dB
ZL (Ω)
8 - j2
8 - j3
Swp Max
1.96GHz
2.
0
Gain (dB)
18.5
18.0
P1dB (dBm) OIP3 (dBm)
+34
+48
+34
+48
Output IP3
PAE (%)
49
50
Swp Max
1.96GHz
2.
0
0
3.
0
4.
5. 0
0.2
10.0
10.0
48
47
33
31
0
- 0.
2
44
41
.4
-0
30
-4
.0
27
.4
-0
0
.
-2
.6
-0.8
-0
.6
-0
P1dB max (1.96 GHz) = +34 dBm at Z
L
= 8 - j2
Ω
Swp Min
1e-009GHz
-0.8
.
-2
0
OIP3 max (1.96 GHz) = +48 dBm at Z
L
= 8 - j2
Ω
Specifications and information are subject to change without notice
Swp Min
1e-009GHz
-1.0
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
-1.0
-4
.0
28
-5.
0
-3
.0
- 5.
29
2
-0 .
43
42
-10.0
-1 0.0
32
46
45
10.0
0.8
3.0
4.0
0.2
0.4
0.6
1.0
2.0
5.0
0.8
3.0
4.0
0.2
0.4
0.6
1.0
2.0
5.0
0
0
0.
4
1.96 GHz
r 8 Ohm
x -2 Ohm
0.
4
1.96 GHz
r 8 Ohm
x -2 Ohm
6
0.
0.
6
0.8
1.0
0
3.
0
4.
5. 0
10.0
-1.0
Swp Min
0.01GHz
-0
.6
-1.0
-0 .8
.0
-2
Swp Min
0.01GHz
Page 2 of 12 March 2008
- 5.
-4
.0
0
- 0.
2
-1 0. 0
1
10.0
-3
.0
0.2
0.4
0.6
0.8
1.0
2.0
4.0
5.0
3.0
0
0 .2
20
6
5
4
3
0.
4
5
6
0. 8
0
3.
0
4.
5 .0
10 .0
-3
.0
-3
.0
0. 2
FP31QF
2-Watt HFET
Application Circuit: 870 – 960 MHz (FP31QF-PCB900)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +9 V, I
ds
= 450 mA, 25
°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+18 dBm / tone, 1 MHz spacing)
MHz
dB
dB
dB
dBm
dBm
dB
dBm
870
18.3
-15
-9.3
+33.9
3.4
915
18
-20
-12
+34
+46
3.5
+27.8
960
17.7
-16
-16
+33.7
3.5
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
Bill of Materials
Ref. Desig.
C1, C4, C8, C10
C2, C3
C7, C11
C12
L1, L2
L3
R1
R2
Q1
C5, C6
•
•
•
•
Circuit Board Material: .014” FR-4 (ε
r
= 4.6),
4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper
The main microstrip line has a line impedance of 50
Ω.
Value
100 pF
4.7 pF
1000 pF
0.1
μF
27 nH
3.3 nH
10
Ω
51
Ω
FP31QF
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Wirewound chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 2W HFET
Do Not Place
Size
0603
0603
0603
1206
0805
0603
0603
0603
QFN 6x6
C2
C3
The C2 and C3 placements are at silk screen markers, “H” and “9.5”, respectively.
The via hole spacing along the main microstrip line is .040”.
The distance from the edge of the FP31QF to the closer edge of L3 is .305”.
The transmission line lengths shown in the schematic are from the FP31QF
device edge to the component edge.
ID=C8
C=100 pF ID=C7
C=1000 pF
-Vgg
Vds=9V @ 450 mA
ID=C12
C=1e5 pF
ID=R2
R=51 Ohm
ID=C11
C=1000 pF
ID=C10
C=100 pF
ID=C1
C=100 pF
TLINP
ID=TL1
Z0=50 Ohm
L=500 mil
Eeff=3.46
Loss=0
F0=0 MHz
ID=L3
L=3.3 nH
ID=L1
L=27 nH
NET="FP31QF"
2
ID=L2
L=27 nH
ID=C4
C=100 pF
1
ID=R1
R=10 Ohm
ID=C2
C=4.7 pF
TLINP
ID=TL2
Z0=50 Ohm
L=520 mil
Eeff=3.46
Loss=0
F0=0 MHz
ID=C3
C=4.7 pF
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 3 of 12 March 2008
FP31QF
2-Watt HFET
FP31QF-PCB900 Application Circuit Performance Plots
S11 vs. Frequency
S21 vs. Frequency
S22 vs. Frequency
0
-5
S11 (dB)
-10
-15
-20
-25
-30
860
-40c
+25c
+85c
20
19
S21 (dB)
18
17
16
-40c
+25c
+85c
0
-5
S22 (dB)
-10
-15
-20
-25
-30
860
-40c
+25c
+85c
880
900
920
940
960
15
860
880
900
920
940
960
880
900
920
940
960
Frequency (MHz)
P1dB vs. Frequency
Frequency (MHz)
Noise Figure vs. Frequency
Frequency (MHz)
ACPR vs. Channel Power
IS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Meas BW
36
34
P1dB (dBm)
32
30
28
-40c
+25c
+85c
6
5
NF (dB)
4
3
2
1
0
860
-40c
+25c
+85c
-40
freq = 915 MHz
ACPR (dBc)
-50
-60
-40 C
+25 C
+85 C
26
860
-70
880
900
920
940
960
22
23
24
25
26
27
28
29
Frequency (MHz)
IMD products vs. Output Power
880
900
920
940
960
Frequency (MHz)
OIP3 vs. Temperature
Output Channel Power (dBm)
OIP3 vs. Output Power
50
45
40
35
30
fundamental frequency = 915 MHz, 916 MHz; Temp = +25° C
50
IMD products (dBm)
-20
-40
-60
-80
-100
fundamental frequency = 915 MHz, 916 MHz; Temp = +25° C
48
OIP3 (dBm)
46
44
42
freq = 915, 916 MHz
+18 dBm / tone
IMD_Low
IMD_High
40
-40
-15
10
35
60
85
4
8
Temperature (°C)
Output Power / Gain vs. Input Power
20
18
frequency = 915 MHz, Temp = -40° C
12
16
20
Output Power (dBm)
24
28
OIP3 (dBm)
4
8
12
16
20
Output Power (dBm)
frequency = 915 MHz, Temp = +85° C
24
28
Output Power / Gain vs. Input Power
36
Output Power (dBm)
32
28
24
20
18
Gain (dB)
Gain
16
14
12
10
-4
0
4
8
12
Input Power (dBm)
16
20
Output Power
28
24
20
16
frequency = 915 MHz, Temp = +25° C
Output Power / Gain vs. Input Power
36
Output Power (dBm)
32
20
18
36
Output Power (dBm)
32
Gain
Gain (dB)
Gain (dB)
Gain
16
14
12
10
-4
0
4
8
12
Input Power (dBm)
16
20
16
14
12
10
-4
0
4
8
12
Input Power (dBm)
16
20
28
24
Output Power
20
16
Output Power
20
16
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 4 of 12 March 2008
FP31QF
2-Watt HFET
Application Circuit: 1930 – 1960 MHz (FP31QF-PCB1900)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +9 V, I
ds
= 450 mA, 25
°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+18 dBm / tone, 1 MHz spacing)
MHz
dB
dB
dB
dBm
dBm
dB
dBm
1930
14
-17
-11
+33.5
4.3
1960
13.8
-21
-11
+33.8
+46.8
4.5
+27.3
1990
13.8
-27
-13
+33.8
4.4
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
Bill of Materials
Ref. Desig.
C1, C4, C8, C10
C2
C3
C7, C11
C12
L1, L2
L3
R1
R2
Q1
C5, C6
•
•
•
•
Value
22 pF
2.2 pF
2.0 pF
1000 pF
0.1
μF
12 nH
4.7 nH
5.1
Ω
51
Ω
FP31QF
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Wirewound chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 2W HFET
Do Not Place
Size
0603
0603
0603
0603
1206
0805
0603
0603
0603
QFN 6x6
C2
C3
Circuit Board Material: .014” FR-4 (ε
r
= 4.6),
4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper
The main microstrip line has a line impedance of 50
Ω.
The C2 and C3 placements are at silk screen markers, “B” and “3”, respectively.
The via hole spacing along the main microstrip line is .040”.
The distance from the edge of the FP31QF to the closer edge of L3 is .305”.
The transmission line lengths shown in the schematic are from the FP31QF
device edge to the component edge.
ID=C8
C=22 pF
ID=C7
C=1000 pF
-Vgg
Vds=9V @ 450 mA
ID=C12
C=1e5 pF
ID=R2
R=51 Ohm
ID=C11
C=1000 pF
ID=C10
C=22 pF
ID=C1
C=22 pF
ID=L3
L=4.7 nH
TLINP
ID=TL1
Z0=50 Ohm
L=190 mil
Eeff=3.46
Loss=0
F0=0 MHz
ID=L1
L=12 nH
NET="FP31QF"
2
ID=L2
L=12 nH
ID=C4
C=22 pF
1
ID=R1
R=5.1 Ohm
ID=C2
C=2.2 pF
TLINP
ID=TL2
Z0=50 Ohm
L=200 mil
Eeff=3.46
Loss=0
F0=0 MHz
ID=C3
C=2 pF
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 5 of 12 March 2008
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