Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 500 pieces for SOIC-8 package on a 7” reel
Standard tape / reel size = 1000 pieces for DFN package on a 7” reel.
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc
•
Phone 1-503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 1 of 12 July 2010
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
S-Parameters (V
CC
= +5 V, I
CC
= 400 mA, T = 25
°C,
calibrated to device leads)
S11
1.0
0.8
Typical Device Data (SOIC-8)
6
0.
S22
2.
0
6
0.
35
30
25
Gain (dB)
20
DB(|S(2,1)|)
AH212
0.
4
Swp Max
3GHz
1.0
0.8
Gain
Swp Max
3GHz
2.
0
0
3.
0
4.
0.2
5.0
0.2
10.0
10.0
15
10
5
0
0.5
1
1.5
Frequency (GHz)
2
2.5
3
S(1,1)
AH212
-4
.0
-5.
0
-4
.0
-5.
0
2
-0.
2
-0.
-10.0
-10.0
.4
-0
.4
-0
.0
-2
-0
.6
Swp Min
0.01GHz
S(2,2)
AH212
-0.8
-0
.6
-0.8
.0
-2
Swp Min
0.01GHz
-1.0
Notes:
The gain for the unmatched device in 50-ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain
will be higher. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increment.
S-Parameters for AH212-S8G (V
CC
= +5 V, I
CC
= 400 mA, T = 25
°C,
unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
-9.19
-4.58
-0.92
-2.81
-4.10
-10.08
-14.20
-7.51
-6.58
-6.67
-7.87
-11.42
-18.51
-8.70
-4.43
-2.78
-2.44
-130.35
-125.96
-169.81
160.59
134.99
97.76
-174.16
146.36
101.88
65.24
37.31
19.84
69.85
105.38
93.47
84.89
81.11
17.61
21.86
27.39
26.96
26.35
30.19
31.30
29.49
27.14
25.02
23.35
22.01
20.56
18.40
15.61
12.91
10.51
65.80
69.36
14.98
-55.64
-69.83
-108.08
-167.40
141.86
99.61
63.05
28.87
-5.81
-44.21
-84.80
-122.39
-156.41
167.98
-64.44
-58.42
-55.39
-50.75
-49.90
-46.20
-49.63
-44.88
-45.19
-46.75
-47.96
-44.88
-40.54
-38.49
-38.94
-39.25
-38.27
122.93
-135.96
49.47
78.75
59.30
44.46
25.99
48.15
29.86
33.97
24.08
70.88
52.01
31.21
23.84
-2.01
0.70
-2.71
-2.92
-3.04
-1.13
-0.86
-0.93
-1.05
-1.97
-2.76
-2.82
-2.53
-2.08
-1.45
-1.02
-0.89
-1.16
-1.34
-1.0
-145.39
-160.72
-166.12
-169.23
-179.36
172.84
164.98
159.52
156.95
154.08
150.05
143.86
134.91
123.57
113.66
106.71
101.38
Device S-parameters are available for download from the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014” FR4, four layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitor – C7. The markers and vias are spaced in 0.050” increments.
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc
•
Phone 1-503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 2 of 12 July 2010
10.0
-3
.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0
0.
4
0
3.
0
4.
5.0
10.0
-3
.0
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212-S8 1850 MHz Reference Design
Typical RF Performance at 25
°C
Frequency (MHz)
Gain (dB)
Input Return Loss (dB)
Output Return Loss (dB)
Output P1dB (dBm)
Output IP3 (dBm)
(+15 dBm / tone, 1 MHz spacing)
1800
25.4
10.5
15.5
+30.5
+47
5.8
1850
25.1
12
15
+30.5
+47
5.8
+5 V
400 mA
1900
25
12.5
13
+30
+47.5
5.9
Noise Figure (dB)
Device / Supply Voltage
Quiescent Current
2
DNP
2.7 pF
Notes:
1. C7 is placed at silkscreen marker ‘2’ and ‘3’ on tqs evalboard or @ 10 deg at 1.85
GHz away from pins 6 and 7.
2. All passive components are of size 0603 unless otherwise noted.
S21 vs. Frequency
S22 vs. Frequency
28
27
S 2 2 (d B )
+25°C
-40°C
+85°C
0
-5
-10
-15
-20
+25°C
-40°C
+85°C
S 2 1 (d B )
26
25
24
23
22
1800
1820
1840
1860
Frequency (MHz)
S11 vs. Frequency
1880
1900
-25
1800
1820
1840
1860
1880
1900
Frequency (MHz)
OIP3 vs. Frequency
+85°C
O IP 3 (d B m )
55
50
+25° C, +15 dBm/tone
0
+25°C
-40°C
-5
S 1 1 (d B )
-10
-15
-20
-25
1800
45
40
35
1800
1820
1840
1860
1880
1900
1820
Frequency (MHz)
1840
1860
Frequency (MHz)
1880
1900
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc
•
Phone 1-503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 3 of 12 July 2010
AH212
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Channel Power
1 Watt High Linearity, High Gain InGaP HBT Amplifier
1960 MHz Application Circuit (AH212-S8PCB1960)
Typical RF Performance at 25
°C
1960 MHz
24.6 dB
12.5 dB
10 dB
+30 dBm
+48 dBm
23 dBm
5.5 dB
+5 V
400 mA
2
DNP
2.7 pF
(+15 dBm / tone, 1 MHz spacing)
(@-45 dBc ACPR, IS-95, 9 channels fwd)
Noise Figure
Device / Supply Voltage
Quiescent Current
Notes:
1. C7 is placed at silkscreen marker ‘2’ and ‘3’ on tqs evalboard or @14 deg at 1.96 GHz
away from pins 6 and 7.
2. All passive components are of size 0603 unless otherwise noted.
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