VG025
High Linearity Variable Gain Amplifier
Product Features
•
Tunable within 50 – 2200 MHz
•
21 dB Attenuation Range
•
Constant +40 dBm OIP3 and +21
dBm P1dB over all gain settings
•
Single +5V Supply Voltage
•
16-pin 4x4mm lead-free/green/
RoHS-compliant QFN Package
•
MTTF > 1000 years
Product Description
The VG025 is a high dynamic range variable gain
amplifier (VGA) capable of achieving an analog
attenuation range of up to 21 dB. The +21 dBm output
compression point and +40 dBm output intercept point
of the amplifier are maintained over the entire
attenuation range, making the VG025 ideal for use in
temperature compensation circuits or AGC loops.
The VG025 is available in a lead-free/green/RoHS-
compliant 16-pin 4x4mm QFN surface-mount package
with an exposed backside paddle to allow an MTTF
rating of over 1000 years at a mounting temperature of
+85º C. All devices are 100% RF & DC tested and
packaged on tape and reel for automated surface-mount
assembly.
Functional Diagram
N/C
N/C
N/C
14
16
N/C 1
N/C 2
N/C 3
RF IN 4
5
N/C
6
Interstage
Match
7
N/C
8
Gain
Control
15
N/C
13
12 RF OUT
11 N/C
10
Interstage
Match
9 N/C
Applications
•
AGC circuitry
•
Temperature compensation circuits
•
DCS/PCS, cdma2000
TM,
W-CDMA
Function
RF Input
Gain Control
Interstage Match
RF Output / DC bias
No Connect or GND
Ground
Pin Number
4
8
6, 10
12
All other pins
Backside slug
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
(2)
Input Return Loss
(2)
Output Return Loss
(2)
Output P1dB
Output IP3
(3)
Noise Figure
(2)
Gain Variation Range
(4)
Gain Variation Control Voltage
(5)
Supply Voltage
Operating Current Range
Gain Control Pin Current
Typical Performance
(1)
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dB
dB
V
V
mA
mA
50
13.5
800
15
6.3
7.6
21.3
39
5.3
21
5
150
26
Typ
Max
2200
Parameter
Frequency
Gain
(2)
Input Return Loss
(2)
Output Return Loss
(2)
Output P1dB
Output IP3
(3)
Noise Figure
(2)
Gain Variation Range
Units
MHz
dB
dB
dB
dBm
dBm
dB
dB
240
15.4
11
11
21.8
42
4.5
20
Typical
800
15
6.3
7.6
21.3
39
5.3
21
1960
8.4
12
6.5
22
40
8.1
14
2140
8.4
11
5.6
22
40
8.2
13
37
16
0
120
24
4.5
180
28
1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit. Vctrl
is the control voltage through the 120
Ω
dropping resistor as shown in the application circuit on page 2.
2. Specifications refer to the device at the maximum gain setting (Vctrl=0V). The input and output
return loss will be dramatically improved with an attenuation setting greater than 1 dB.
3. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
4. The gain variation range is measured as the difference in gain with Vctrl = 0 and 4.5V at 800 MHz.
5. This voltage refers to the V
CTRL
as shown in the circuit schematic on page 2. There should be a
series resistance of 120Ω between the control voltage and pin 8 for proper operation.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
Amplifier Supply Voltage (pin 12)
Pin 8 (Gain Control) Current
RF Input Power (continuous)
Junction Temperature
-40 to +85
°C
-55 to +125
°C
+6 V
30 mA
4 dB above Input P1dB
+220
°C
Rating
Ordering Information
Part No.
VG025-G
Description
High Linearity Variable Gain Amplifier
(lead-free/green/RoHS-compliant 4x4mm QFN package)
VG025-PCB240 240 MHz Evaluation Board
VG025-PCB800 800 MHz Evaluation Board
VG025-PCB2000 1.7 – 2.2 GHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
TriQuint Semiconductor Inc
•
Phone 1-503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 1 of 7
July 2010
VG025
High Linearity Variable Gain Amplifier
Application Circuit Configurations
Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness
The WJ VG025 variable gain amplifier can operate over a very
broad range of frequencies (50 - 2200MHz), but needs specific
matching circuits for specific bands of interest. At the maximum
gain state, reasonable matching is only available for about ±10% of
the reference frequency. The amplifier operates with a typical
current of 150 mA at +5 V while the attenuator current can be varied
from 0 to 30 mA, while maintaining constant OIP3 and P1dB. The
RF matching of the VG025 for the entire frequency range can be
accomplished with the systematic adjustment of only a few parts.
The RF matching is not influenced by different attenuator drive
methods provided there is adequate decoupling of the attenuator bias.
This reference application circuit uses voltage applied between 0
and 4.5V onto the Vctrl as shown on the schematic above. The R2 is
a current limiting resistor to help linearize the drive of the attenuator
and give better attenuator current control.
To properly design the VG025 for an application, pick the frequency
of interest. Choose blocking capacitor values which give RF
impedance of less than 3 ohms. Choose the RF chokes for the
largest inductance while still having resonant frequency about 30%
Reference Frequency
C1, C5
C2
C3, C4
C6
C9
L1, L2
L3
L4
R1
R2
Attenuation Range
Maximum Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
MHz
pF
pF
μF
pF
pF
nH
nH
nH
Ω
Ω
dB
dB
dB
dB
dBm
dBm
dB
64
1000
0
Ω
.01
DNP
27
470
220
DNP
DNP
120
20.8
14.9
14
10.7
21.8
40
5.9
127
1000
0
Ω
.01
DNP
8.2
220
100
DNP
DNP
120
20.4
15.4
14.5
10.7
21.5
42
5.2
greater than the Reference frequency (this allows for good isolation
and inductor variation). Next choose L3 and C9 for interstage
matching. C9 is only needed for lower frequencies and determines
the low frequency roll off of the gain. L3 will have dominant
control over the input and output return losses at maximum gain
state (0 mA gain control pin current). C2 is needed to resonate the
package parasitics to achieve the maximum attenuation values with
attenuator current. With attenuator control pin current of 26 mA, C2
can be chosen to provide maximum attenuation. See the chart below
for suggested component values and predicted performance at
various reference frequencies.
Component values can be
interpolated for reference frequencies not listed.
For lower frequencies the lumped element values can be used and
the layout with unplaced component pads does not greatly affect the
RF performance of the circuit. For frequencies greater than 500
MHz, component size and trace length have more influence on
circuit performance. Smaller components and shorter trace lengths
reduce the affects of the external component parasitics and
interaction with the multichip module parasitics.
170
1000
0
Ω
.01
DNP
5.6
120
68
DNP
DNP
120
19.6
14.8
14.5
10
21.5
42
5.4
240
1000
0
Ω
.01
DNP
1.2
220
47
DNP
DNP
120
20
15.4
11
11
21.8
42
4.5
800
56
27
.01
DNP
DNP
22
8.2
82
DNP
120
21
15
6.3
7.6
21.3
39
5.3
1850
56
3.6
.01
DNP
DNP
12
DNP
33
DNP
120
12
8.6
11
7.7
22
40
7.9
1960
56
3.6
.01
DNP
DNP
12
DNP
33
DNP
120
14
8.4
12
6.5
22
40
8.1
2140
56
3.6
.01
DNP
DNP
12
DNP
33
DNP
120
13
8.4
11
5.6
22
40
8.2
DNP = Do Not Place (Component is not used in the design)
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc
•
Phone 1-503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 2 of 7
July 2010
VG025
20
18
S21 (dB)
High Linearity Variable Gain Amplifier
240 MHz Circuit Performance (VG025-PCB240)
S21 vs. Frequency
Vctrl=0V (Maximum Gain Setting)
S11 vs. Frequency
Vctrl=0V (Maximum Gain Setting)
S22 vs. Frequency
Vctrl=0V (Maximum Gain Setting)
0
-5
0
-5
S22 (dB)
-10
-15
-20
-40 °C
+25 °C
260
S11 (dB)
16
14
12
-10
-15
-20
-40 °C
10
200
220
240
+25 °C
260
280
+85 °C
300
-25
200
220
+85 °C
280
300
-40 °C
+25 °C
+85 °C
240
-25
200
220
240
260
280
300
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
S22 vs. Frequency vs. Control Voltage
S21 vs. Frequency vs. Control Voltage
S11 vs. Frequency vs. Control Voltage
20
15
10
S21 (dB)
S11 (dB)
5
0
-5
-10
-15
200
Vctrl=0.000V
Vctrl=1.844V
Vctrl=0.784V
Vctrl=4.230V
Vctrl=1.133V
0
-5
S22 (dB)
-10
-15
-20
-25
-30
200
Vctrl=0.000V
Vctrl=1.133V
Vctrl=4.230V
Vctrl=0.784V
Vctrl=1.844V
0
Vctrl=0.000V
Vctrl=0.784V
Vctrl=1.844V
-5
-10
-15
-20
-25
-30
200
Vctrl=1.133V
Vctrl=4.230V
220
240
260
280
300
220
240
260
280
300
220
240
260
280
300
Frequency (MHz)
P1dB vs. Frequency
Vctrl=0V (Minimum attenuation)
Frequency (MHz)
Phase change vs. Attenuation
25 °C, 240 MHz
Frequency (MHz)
Noise Figure vs. Frequency
Vctrl=0V (Minimum attenuation)
26
50
phase change (deg)
40
NF (dB)
6
5
4
3
2
1
220
24
P1dB (dBm)
22
20
18
30
20
10
0
-40 °C
16
230
235
+25 °C
240
+85 °C
245
250
-40 °C
230
240
+25 °C
250
+85 °C
260
0
4
Frequency (MHz)
8
12
16
Attenuation (dB)
20
24
Frequency (MHz)
OIP3 vs. Attenuation Setting
45
OIP3 (dBm)
40
35
30
25
0
2
4
6
Attenuation (dB)
25 °C, 240 MHz
frequency = 240, 241 MHz, +5 dBm/tone, +25 °C
OIP3 vs. Output Power
45
40
35
30
25
8
10
-4
+25 °C
+85 °C
0
-40 °C
frequency = 240, 241 MHz, 0dB Atten.
IMD products vs. Output Power
-40
IMD products (dBc)
-60
-80
-100
-120
fundamental frequency = 240, 241 MHz; +25 °C, 0dB Atten
IMD_Low
IMD_High
OIP3 (dBm)
4
8
Output Power (dBm)
Normalized Gain vs. Vctrl
25 °C, 240 MHz
12
16
-4
0
4
8
Output Power (dBm)
Ictrl vs. Vctrl
25 °C
12
16
Gain vs. Pin 8 Attn. Control Current
15
Normalized Gain (dB)
10
Gain (dB)
5
0
-5
-10
0
5
10
15
20
25
Pin 8 Attenuation Control Current (mA)
0
-4
30
25
Ictrl (mA)
20
15
10
5
0
0
1
2
Vctrl (V)
3
4
5
-8
-12
-16
-20
-24
0
1
2
Vctrl (V)
3
4
5
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc
•
Phone 1-503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 3 of 7
July 2010
VG025
20
18
S21 (dB)
High Linearity Variable Gain Amplifier
800 MHz Circuit Performance (VG025-PCB800)
S21 vs. Frequency
Vctrl=0V (Maximum Gain Setting)
S11 vs. Frequency
Vctrl=0V (Maximum Gain Setting)
S22 vs. Frequency
Vctrl=0V (Maximum Gain Setting)
5
0
0
-5
S22 (dB)
-10
-15
-20
-40 °C
800
16
14
12
-40 °C
+25 °C
+85 °C
S11 (dB)
-5
-10
-15
-20
-25
700
+25 °C
900
+85 °C
1000
-40 °C
+25 °C
+85 °C
10
700
800
900
1000
-25
700
800
900
1000
Frequency (MHz)
S21 vs. Frequency vs. Control Voltage
Frequency (MHz)
Frequency (MHz)
S22 vs. Frequency vs. Control Voltage
S11 vs. Frequency vs. Control Voltage
20
15
10
S21 (dB)
S11 (dB)
5
0
-5
-10
-15
700
Vctrl=0.00V
Vctrl=1.73V
Vctrl=0.78V
Vctrl=4.50V
Vctrl=1.10V
0
-5
S22 (dB)
Vctrl=0.00V
Vctrl=1.73V
Vctrl=0.78V
Vctrl=4.50V
Vctrl=1.10V
0
-5
-10
-15
-20
-25
-30
700
Vctrl=0.00V
Vctrl=1.73V
Vctrl=0.78V
Vctrl=4.50V
Vctrl=1.10V
-10
-15
-20
-25
-30
700
800
900
1000
800
900
1000
800
900
1000
Frequency (MHz)
P1dB vs. Frequency
Vctrl=0V (Minimum attenuation)
Frequency (MHz)
Phase change vs. Attenuation
25 °C, 800 MHz
Frequency (MHz)
Noise Figure vs. Frequency
Vctrl=0V (Maximum Gain Setting)
26
24
P1dB (dBm)
22
20
18
80
phase change (deg)
60
40
20
0
800
900
1000
Noise Figure (dB)
6
5
4
3
2
-40 °C
16
700
+25 °C
+85 °C
-40 °C
0
4
8
12
Attenuation (dB)
16
20
1
700
+25 °C
800
+85 °C
900
1000
Frequency (MHz)
Frequency (MHz)
OIP3 vs. Attenuation Setting
45
frequency = 800, 801 MHz, +5 dBm/tone, +25 °C
OIP3 vs. Output Power
45
40
35
30
+25 °C
-40 °C
+85 °C
-100
-4
0
4
8
Output Power (dBm)
Normalized Gain vs. Vctrl
25 °C, 800 MHz
frequency = 800, 801 MHz, 0dB Atten.
IMD products vs. Output Power
-40
fundamental frequency = 800, 801 MHz; +25 °C, 0dB Atten
OIP3 (dBm)
OIP3 (dBm)
40
35
30
25
0
2
4
6
Attenuation (dB)
8
10
IMD products (dBc)
IMD_Low
IMD_High
-60
-80
25
12
16
-4
0
4
8
Output Power (dBm)
12
16
Gain vs. Pin 8 Attn. Control Current
25 °C, 800 MHz
Ictrl vs. Vctrl
25 °C
16
Normalized Gain (dB)
12
Gain (dB)
8
4
0
-4
-8
0
5
10
15
20
25
Pin 8 Attenuation Control Current (mA)
0
-4
30
25
Ictrl (mA)
20
15
10
5
0
0
1
2
Vctrl (V)
3
4
5
-8
-12
-16
-20
-24
0
1
2
Vctrl (V)
3
4
5
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc
•
Phone 1-503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 4 of 7
July 2010
VG025
10
5
S21 (dB)
High Linearity Variable Gain Amplifier
1960 MHz Circuit Performance (VG025-PCB2000)
S21 vs. Frequency vs. Control Voltage
S11 vs. Frequency vs. Control Voltage
S22 vs. Frequency vs. Control Voltage
0
-5
S11 (dB)
-10
-15
-20
-25
1700
Vctrl=0.00V
Vctrl=1.15V
Vctrl=4.50V
Vctrl=0.82V
Vctrl=1.72V
0
-5
S22 (dB)
-10
-15
-20
-25
1700
Vctrl=0.00V
Vctrl=1.15V
Vctrl=4.50V
Vctrl=0.82V
Vctrl=1.72V
0
-5
Vctrl=0.00V
Vctrl=1.72V
Vctrl=0.82V
Vctrl=4.50V
Vctrl=1.15V
-10
1700
1750
1800
1850
1900
1950
2000
1750
1800
1850
1900
1950
2000
1750
1800
1850
1900
1950
2000
Frequency (MHz)
P1dB vs. Frequency
Vctrl=0V (Minimum attenuation)
Frequency (MHz)
Phase change vs. Attenuation
25 °C, 1900 MHz
Frequency (MHz)
Noise Figure vs. Frequency
Vctrl=0V (Maximum Gain Setting)
26
20
phase change (deg)
10
9
8
NF (dB)
7
6
5
4
1700
24
P1dB (dBm)
22
20
18
16
1700
0
-10
-20
1800
1900
2000
2100
2200
0
2
4
Frequency (MHz)
6
8
10
Attenuation (dB)
12
14
1800
1900
2000
2100
2200
Frequency (MHz)
IMD products vs. Output Power
-40
fundamental frequency = 800, 801 MHz; +25 °C, 0dB Atten
OIP3 vs. Attenuation Setting
45
frequency = 1960, 1961 MHz, +5 dBm/tone, +25 °C
OIP3 vs. Output Power
45
40
35
30
+25 °C
-40 °C
+85 °C
-120
-4
0
4
8
Output Power (dBm)
Normalized Gain vs. Vctrl
25 °C, 1900 MHz
frequency = 1900, 1961 MHz, 0dB Atten.
OIP3 (dBm)
35
30
25
0
2
4
6
Attenuation (dB)
8
10
OIP3 (dBm)
40
IMD products (dBc)
-60
-80
-100
IMD_Low
IMD_High
25
12
16
-4
0
4
8
Output Power (dBm)
12
16
Ictrl vs. Vctrl
25 °C
Gain vs. Pin 8 Attn. Control Current
25 °C, 1900 MHz
0
Normalized Gain (dB)
-2
30
25
Ictrl (mA)
20
15
10
5
0
0
1
2
Vctrl (V)
3
4
5
10
8
6
Gain (dB)
4
2
0
-2
-4
-6
0
5
10
15
20
25
Pin 8 Attenuation Control Current (mA)
-4
-6
-8
-10
-12
-14
0
1
2
Vctrl (V)
3
4
5
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc
•
Phone 1-503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 5 of 7
July 2010
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