Please note that for reliable operation, the evaluation board will have to be mounted to a much
larger heat sink during operation and in laboratory environments to dissipate the power
consumed by the device. The use of a convection fan is also recommended in laboratory
environments.
2.
The area around the module underneath the PCB should not contain any soldermask in order to
maintain good RF grounding.
3.
For proper and safe operation in the laboratory, the power-on sequencing is recommended.
Evaluation Board Bias Procedure
Following bias procedure is recommended to ensure proper functionality of AP562 in a laboratory environment. The sequencing is not
required in the final system application.
Bias.
Vcc
Vpd
Voltage (V)
+12
+5
Turn-on Sequence:
1.
2.
3.
4.
1.
2.
3.
Attach input and output loads onto the evaluation board.
Turn on power supply Vcc = +12V.
Turn on power supply Vpd = +5V.
Turn on RF power.
Turn off RF power.
Turn off power supply Vpd = +5V.
Turn off power supply Vcc = +12V.
Turn-off Sequence:
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 1-800-951-4401
•
FAX: 408-577-6633
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 2 of 8 May 2009
AP562
40
3.3-3.8 GHz WiMAX 8W Power Amplifier
S-Parameters (V
CC
= +12 V, I
CC
= 400 mA, 25
°C,
unmatched 50 ohm system)
S(1,1)
AP562
0.8
Typical Device Data
S11
1.0
6
0.
0
6
0.
Swp Max
6GHz
2.
0.8
1.0
Gain / Maximum Stable Gain
S22
S(2,2)
AP562
Swp Max
6GHz
2.
0
0
3.
0
3.
0
4.
0.2
0.2
20
Gain (dB)
10
0
5.0
10.0
10.0
0
-10
-20
0
2
Frequency (GHz)
4
6
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
-0
.4
.4
-0
.0
-2
-0
.6
-0.8
-0
.6
Swp Min
0.05GHz
-0.8
-2
.0
Swp Min
0.05GHz
-1.0
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that
actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line.
S-Parameters (V
CC
= +12 V, I
CQ
= 400 mA, 25
°C,
unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
100
300
500
700
900
1100
1300
1500
1700
1900
2100
2300
2500
2700
2900
3100
3300
3500
3700
3900
4100
4300
4500
-0.79
-0.40
-0.31
-0.29
-0.29
-0.34
-0.36
-0.37
-0.35
-0.47
-0.50
-0.60
-0.69
-0.82
-0.94
-1.16
-1.51
-2.02
-2.49
-2.56
-2.06
-1.43
-1.01
-0.76
-175.42
-177.67
179.53
177.89
175.84
173.80
171.63
168.83
165.93
161.85
158.09
154.55
150.84
147.61
144.72
142.23
140.70
140.58
142.81
147.66
151.40
151.78
150.24
148.06
27.05
22.28
14.07
9.72
6.87
4.76
3.14
1.85
0.86
0.96
0.45
0.05
-0.24
-0.40
-0.44
-0.27
-0.02
0.25
0.36
-0.16
-1.53
-3.50
-5.66
-7.78
124.23
107.37
90.92
82.63
75.39
69.22
62.91
56.68
50.02
41.71
34.33
26.46
17.89
9.26
-0.25
-11.07
-23.54
-38.88
-58.18
-80.37
-102.11
-120.64
-135.37
-147.04
-41.01
-41.94
-41.94
-41.62
-41.31
-41.51
-41.31
-41.31
-41.31
-40.35
-40.35
-40.18
-40.09
-39.83
-39.58
-39.33
-38.79
-38.06
-37.59
-37.20
-37.33
-37.79
-38.27
-38.56
40.51
16.01
2.09
0.94
8.79
0.79
-1.63
-5.01
-8.04
-13.12
-18.22
-24.14
-31.86
-40.50
-51.10
-65.09
-81.01
-102.23
-129.91
-160.59
169.42
144.14
122.49
107.83
-1.10
-1.53
-1.68
-1.77
-1.81
-1.71
-1.63
-1.60
-1.57
-1.66
-1.61
-1.51
-1.38
-1.28
-1.17
-1.02
-0.81
-0.59
-0.33
-0.23
-0.28
-0.40
-0.53
-0.64
-1.0
-104.38
-137.35
-163.78
-171.20
-175.14
-177.04
-178.74
179.84
178.03
174.97
172.45
170.10
167.43
164.93
162.74
160.45
158.40
156.27
153.91
150.78
148.13
146.26
145.38
144.44
Device S-parameters are available for download off of the website at: http://www.tqs.com
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 1-800-951-4401
•
FAX: 408-577-6633
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 3 of 8 May 2009
-4
.0
DB(GMax())
AP562
DB(|S(2,1)|)
AP562
.0
-5.
0
-3
.0
-4
.0
-5.
0
2
-0.
2
-0.
-10.0
0.
4
-10.0
-3
0.
4
30
4.
0
5.0
10.0
AP562
Frequency (GHz)
Channel Power
Power Gain
Input Return Loss
Output Return Loss
EVM
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd
Vcc
3.3-3.8 GHz WiMAX 8W Power Amplifier
3.4-3.6 GHz Application Circuit (AP562-PCB3500)
Typical O-FDMA Performance at 25°C
3.4
3.5
+30 +30
11.5 11.5
11
15
5.6
6.7
2.2
1.9
720 685
11.1 11.7
39.5 39.4
400
+5
+12
C12
C21
R3
D2
R2
D1
R1
C6
C7
C10
C8
C11
C25
C13
C14
C15
3.6 Units
+30 dBm
11.3
dB
15
dB
5.9
dB
1.7
%
670 mA
12.2
%
38.7 dBm
mA
V
V
C16
C17
C18
C1
L3
C22
C23
C24
C20
L3
Notes:
The primary RF microstrip line is 50
Ω.
Components shown on the silkscreen but not on the schematic are not used.
1. The edge of C23 is placed at 43mil from AP562 RFout pin.
2. The edge of C24 is placed right next to C23.
3. The edge of C22 is placed at 95mil from AP562 RFin pin.
4. The edge of L3 is placed right next to C22.
3.4-3.6 GHz Application Circuit Performance Plots
802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels. 9.5 dB PAR @ 0.01%, 5 MHz Carrier BW
Gain vs. Frequency
12
11
T=25°C
Return Loss
0
-5
T=25°C
Current vs Output Average Power vs. Frequency
800
Collector Current (mA)
T=25°C
750
700
650
600
550
500
450
400
3.4 GHz
20
22
3.5 GHz
3.6 GHz
30
32
10
9
8
7
3
3.2
3.4
3.6
Frequency (GHz)
T=25°C
S11, S22 (dB)
Gain (dB)
-10
-15
-20
S11
-25
3.8
4
S22
4
3
3.2
3.4
3.6
Frequency (GHz)
T=25°C
3.8
24
26
28
Output Power (dBm)
Power Gain vs Temperature
Pout = 30 dBm
Efficiency vs Output Average Power vs. Frequency
20
Collector Efficiency (%)
EVM vs. Output Average Power vs. Frequency
5
4
3
2
1
13
15
EVM (%)
10
5
3.4 GHz
0
20
22
24
26
28
Output Power (dBm)
30
32
3.5 GHz
3.6 GHz
Gain (dB)
12
11
3.4 GHz
0
20
22
3.5 GHz
3.6 GHz
30
32
3.4 GHz
10
-50
-30
-10
3.5 GHz
3.6 GHz
70
90
24
26
28
Output Power (dBm)
10
30
50
Temperature (°C )
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 1-800-951-4401
•
FAX: 408-577-6633
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 4 of 8 May 2009
AP562
800
750
700
Icc (mA)
650
600
550
500
450
400
20
22
3.3-3.8 GHz WiMAX 8W Power Amplifier
Current vs Output Average Power vs Temperature
f=3.5 GHz
Efficiency vs Output Average Power vs Temperature
EVM vs. Output Average Power vs Temperature
5
4
EVM (%)
3
2
1
f=3.5 GHz
25
20
Efficiency (%)
15
10
5
f=3.5 GHz
+25ºC
+25ºC
-40ºC
30
-40ºC
+85ºC
0
30
32
20
22
+85ºC
32
+25ºC
24
26
28
Output Power (dBm)
-40ºC
30
+85ºC
32
0
20
22
24
26
28
Output Power (dBm)
24
26
28
Output Power (dBm)
Specifications and information are subject to change without notice
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