AP512
Product Features
•
2110 – 2170 MHz
•
28.5 dB Gain
•
-55 dBc ACLR
@ 28 dBm W-CDMA linear power
UMTS-band 8W HBT Amplifier Module
Product Information
Product Description
The AP512 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package. The multi-stage
amplifier module has 28.5 dB gain, while being able to
achieve high performance for UMTS-band applications with
+39 dBm of compressed 1dB power. The module has been
internally optimized for linearity to provide -55 dBc ALCR
at 28 dBm power for W-CDMA applications.
The AP512 uses a high reliability InGaP/GaAs HBT process
technology and does not require any external matching
components. The module operates off of a +12V supply and
does not requiring any negative biasing voltages; an internal
active bias allows the amplifier to maintain high linearity
over temperature. It has the added feature of a +5V power
down control pin. A low-cost metal housing allows the
device to have a low thermal resistance and achieves over
100 years MTTF. All devices are 100% RF and DC tested.
Functional Diagram
•
+39 dBm P1dB
•
+12 V Single Supply
•
Power Down Mode
•
Bias Current Adjustable
•
RoHS-complaint flange-mount pkg
1
2
3
4
5
6
Top View
Pin No.
1
2/4
3/5
6
Case
Function
RF Output
Vcc
Vpd
RF Input
Ground
Applications
•
Final stage amplifiers for Repeaters
•
Optimized for driver amplifier PA
The AP512 is targeted for use as a driver or final stage
mobile infrastructure
amplifier in wireless infrastructure where high linearity and
high power is required. This combination makes the device an
excellent candidate for next generation multi-carrier 3G base
stations or repeaters using the UMTS frequency band.
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Adjacent Channel Leakage Ratio
Power Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Operating Current
(2)
Quiescent Current, Icq
(2)
Device Voltage, Vcc
Device Voltage, Vpd
(3)
Ruggedness
Units
MHz
MHz
dBc
dB
dB
dB
dBm
dBm
A
A
V
V
VSWR
Min
Typ
Max
Test Conditions
W-CDMA +28 dBm Total Power, ±5 MHz offset
Pout = +28 dBm
2110 – 2170
2140
-55
-50
26
28.5
31
14
6
+39
+53
1.72
1.55
1.69
1.80
+12
+5
10:1
Pout = +28 dBm/tone,
Δf
= 1 MHz
Pout = +28 dBm
Pull-down voltage: 0V = “OFF”, 5V=”ON”
Pout = +39 dBm CW, all phases
1. Test conditions unless otherwise noted: 25ºC.
2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
WCDMA signal (3GPP Test Model 1+ 32 DPCH)
-40 to +85
°C
-55 to +150
°C
+10 dBm
Rating
Ordering Information
Part No.
AP512
AP512-PCB
Description
UMTS-band 8W HBT Amplifier Module
Fully-Assembled Evaluation Board
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 1 of 5 June 2006
AP512
UMTS-band 8W HBT Amplifier Module
Product Information
Class AB Configuration (AP512-PCB)
The AP512-PCB and AP512 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for
the amplifier is set at 0
Ω
in this configuration. Increasing that value will decrease the quiescent and operating current of the
amplifier module, as described on the next page.
+12V
GND
+12V
10μF
DNP
+5V
DNP
0Ω
0Ω
DNP
100pF
.01μF
DNP
RF IN
0Ω
DNP
DNP
6
.01μF
DNP
100pF
RF OUT
0Ω
Notes:
1.
Please note that for reliable operation, the evaluation board and
mounting plate will have to be attached to a much larger heat sink
during operation and in laboratory environments to dissipate the
power consumed by the device.
The use of a convection fan is also
recommended in laboratory environments. Details of the mounting holes
used in the WJ mounting plate are given on the last page of this datasheet.
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
1. Connect RF In and Out
2. Connect the voltages and ground pins as shown in the circuit.
3. Apply the RF signal
4. Power down with the reverse sequence
5
4
3
2
1
DNP
DNP
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 2 of 5 June 2006
AP512
32
30
Gain (dB)
UMTS-band 8W HBT Amplifier Module
Product Information
Performance Graphs (AP512-PCB)
Gain vs. Output Power
Vcc=12V, Icq=1.7A, 25 °C
Gain vs. Output Power
32
30
Gain (dB)
Vcc=12V, Icq=1.7A, 2140 MHz
28
26
24
24
26
28
Output Power (dBm)
ACLR vs. Output Power
2110MHz
2140MHz
2170MHz
28
26
-40 °C
+25 °C
+85 °C
24
30
32
24
26
28
Output Power (dBm)
ACLR vs. Output Power
30
32
-40
-45
-50
-55
-60
24
W-CDMA 3GPP Test Model 1+32,
Δf=±5
MHz, Vcc=12V, Icq=1.7A, 25 °C
ACLR (dBc)
ACLR (dBc)
2110MHz
2140MHz
2170MHz
-40
-45
-50
-55
-60
W-CDMA 3GPP Test Model 1+32,
Δf=±5
MHz, Vcc=12V, Icq=1.7A, 2140 MHz
-40 °C
+25 °C
+85 °C
26
28
30
32
24
26
28
30
32
Average Output Power (dBm)
PAE vs. Output Power
PAE vs. Output Power
Average Output Power (dBm)
Icc vs. Output Power
10
Vcc=12V, Icq=1.7A, 25 °C
PAE (%)
PAE (%)
2110MHz
2140MHz
2170MHz
10
W-CDMA 3GPP Test Model 1+32, 2140 MHz, Vcc=12V, Icq=1.7A
-40 °C
+25 °C
+85 °C
Icc (A)
2.0
1.9
1.8
1.7
1.6
Vcc=12V, 2140 MHz
-40 °C
+25 °C
+85 °C
1
24
26
28
Output Power (dBm)
30
32
1
24
26
28
Output Power (dBm)
30
32
1.5
24
26
28
Output Power (dBm)
30
32
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 3 of 5 June 2006
AP512
UMTS-band 8W HBT Amplifier Module
Product Information
MTTF Calculation
The MTTF of the AP512 can be calculated by first
determining how much power is being dissipated by the
amplifier module. Because the device’s intended application
is to be a power amplifier pre-driver or final stage output
amplifier, the output RF power of the amplifier will help
lower the overall power dissipation. In addition, the
amplifier can be biased with different quiescent currents, so
the calculation of the MTTF is custom to each application.
The power dissipation of the device can be calculated with
the following equation:
P
diss
= V
cc
* I
cc
– (Output RF Power – Input RF Power),
V
cc
= Operating supply voltage =
12V
I
cc
= Operating current
{The RF power is converted to Watts}
While the maximum recommended case temperature on the
datasheet is listed at 85
˚C,
it is suggested that customers
maintain an MTTF above 1 million hours. This would
convert to a derating curve for maximum case temperature vs.
power dissipation as shown in the plot below.
Maximum Recommended Case Temperature vs. Power Dissipation
to maintain 1 million hours MTTF
90
To calculate the MTTF for the module, the junction
temperature needs to be determined. This can be easily
calculated with the module’s power dissipation, the thermal
resistance value, and the case temperature of operation:
T
j
= P
diss
* R
th
+ T
case
T
j
= Junction temperature
P
diss
= Power dissipation (calculated from above)
R
th
= Thermal resistance =
4.5 ˚C/W
T
case
= Case temperature of module’s heat sink
From a numerical standpoint, the MTTF can be calculated
using the Arrhenius equation:
MTTF = A* e
(Ea/k/Tj)
A = Pre-exponential Factor =
6.087 x 10
-11
hours
Ea = Activation Energy =
1.39 eV
k = Boltzmann’s Constant =
8.617 x 10
-5
eV/ ºK
T
j
= Junction Temperature (ºK) = T
j
(ºC) + 273
A graphical view of the MTTF can be shown in the plot
below.
MTTF vs. Junction Temperature
1.E+07
Maximum Case Temperature (°C)
MTTF (hours)
80
1.E+06
70
60
1.E+05
130
50
8
10
12
14
16
18
20
22
24
Power Dissipation (Watts)
140
150
160
170
180
Junction Temperature (°C)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 4 of 5 June 2006
AP512
UMTS-band 8W HBT Amplifier Module
Product Information
Outline Drawing
AP512
1
2
3
4
5
6
Outline Drawing for the Heatsink Shipped
with the WJ Evaluation Board
Product Marking
The device will be marked with an “AP512” designator
with an alphanumeric lot code on the top surface of the
A
package noted as “ABCD” on the drawing.
manufacturing date will also be printed as “XXYY”, where
the “XX” represents the week number from 1 – 52.
The product will be shipped in tubes in multiples of 15.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
ESD Rating:
Value:
Test:
Standard:
Class 1C
Passes at
≥
1,000 to < 2,000 volts
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Class III
Passes
≥
500 to < 1,000 volts
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
The supplied mounting plate with the evaluation board should be mounted and attached to a larger heatsink for proper thermal
operation in a laboratory environment.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com, www.TriQuint.com
Page 5 of 5 June 2006
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