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BAS40LT1/D

Description
schottky barrier diode
File Size74KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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BAS40LT1/D Overview

schottky barrier diode

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAS40LT1/D
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
BAS40LT1
Motorola Preferred Device
3
CATHODE
1
ANODE
40 VOLTS
SCHOTTKY BARRIER DIODES
3
1
2
MAXIMUM RATINGS
(TJ = 150°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating Junction and Storage Temperature Range
Symbol
VR
PF
225
1.8
TJ, Tstg
– 55 to +150
mW
mW/°C
°C
Value
40
Unit
Volts
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
DEVICE MARKING
BAS40LT1 = B1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10
µA)
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage
(VR = 25 V)
Forward Voltage
(IF = 0.1 mAdc)
Forward Voltage
(IF = 30 mAdc)
Forward Voltage
(IF = 100 mAdc)
Symbol
V(BR)R
CT
IR
VF
VF
VF
Min
40
Max
5.0
1.0
380
500
1.0
Unit
Volts
pF
µAdc
mVdc
mVdc
Vdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1

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