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BC807-25W

Description
pnp general purpose transistor
CategoryDiscrete semiconductor    The transistor   
File Size62KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BC807-25W Overview

pnp general purpose transistor

BC807-25W Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-70
package instructionPLASTIC, SC-70, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.5 A
Collector-based maximum capacity10 pF
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.7 V
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
BC807W
PNP general purpose transistor
Product specification
Supersedes data of 1997 Jun 09
1999 May 18

BC807-25W Related Products

BC807-25W BC807-16W
Description pnp general purpose transistor pnp general purpose transistor
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker NXP NXP
Parts packaging code SC-70 SC-70
package instruction PLASTIC, SC-70, 3 PIN SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-based maximum capacity 10 pF 10 pF
Collector-emitter maximum voltage 45 V 45 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 160 100
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.2 W 0.2 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
VCEsat-Max 0.7 V 0.7 V
Base Number Matches 1 1
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