BCW60A/B/C/D
BCW60A/B/C/D
General Purpose Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
Value
32
32
5
100
350
150
Units
V
V
V
mA
mW
°C
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
BCW60A/B/C/D
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CES
I
EBO
h
FE
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: BCW60B
: BCW60C
: BCW60D
: BCW60A
: BCW60B
: BCW60C
: BCW60D
: BCW60A
: BCW60B
: BCW60C
: BCW60D
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
ob
f
T
NF
t
ON
t
OFF
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain Bandwidth Product
Noise Figure
Turn On Time
Turn Off Time
V
CE
=5V, I
C
=10µA
20
40
100
120
180
250
380
60
70
90
100
Test Condition
I
C
=2mA, I
B
=0
I
E
=1µA, I
C
=0
V
CE
=32V, V
BE
=0
V
EB
=4V, I
C
=0
Min.
32
5
20
20
Max.
Units
V
V
nA
nA
V
CE
=5V, I
C
=2mA
220
310
460
630
V
CE
=1V, I
C
=50mA
I
C
=50mA, I
B
=1.25mA
I
C
=10mA, I
B
=0.25mA
I
C
=50mA, I
B
=1.25mA
I
C
=10mA, I
B
=0.25mA
V
CE
=5V, I
C
=2mA
V
CB
=10V, I
E
=0, f=1MHz
I
C
=10mA, V
CE
=5V, f=100MHz
I
C
=0.2mA, V
CE
=5V
R
G
=2KΩ, f=1KHz
I
C
=10mA, I
B1
=1mA
V
BB
=3.6V, I
B2
=1mA
R1=R2=5KΩ,R
L
=990Ω
125
0.7
0.6
0.55
0.55
0.35
1.05
0.85
0.75
4.5
6
150
800
V
V
V
V
V
pF
MHz
dB
ns
ns
Marking Code
Type
Mark.
BCW60A
AA
BCW60B
AB
BCW60C
AC
BCW60D
AD
Marking
AA
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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No Identification Needed
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©2002 Fairchild Semiconductor Corporation
Rev. I1
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