BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
Rev. 01 — 4 February 2009
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation
1-carrier N-CDMA
[1]
[1]
[2]
f
(MHz)
2500 to 2700
V
DS
(V)
28
P
L(AV)
(W)
2
G
p
(dB)
19
η
D
(%)
20
ACPR
885k
(dBc)
−49
[2]
ACPR
1980k
(dBc)
−64
[2]
Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an I
Dq
of 130 mA:
I
Qualified up to a maximum V
DS
operation of 32 V
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation
I
Internally matched for ease of use
I
Low gold plating thickness on leads
I
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
NXP Semiconductors
BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
1.3 Applications
I
RF power amplifiers for base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF6G27-10 (SOT975B)
1
1
2
3
sym112
2
BLF6G27-10G (SOT975C)
1
2
3
drain
gate
source
[1]
1
1
2
3
sym112
2
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G27-10
-
BLF6G27-10G -
Description
earless flanged ceramic package; 2 leads
earless flanged ceramic package; 2 leads
Version
SOT975B
SOT975C
Type number
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
2 of 15
NXP Semiconductors
BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+13
3.5
+150
225
Unit
V
V
A
°C
°C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
Conditions
Type
Typ
4.0
4.0
Unit
K/W
K/W
thermal resistance from T
case
= 80
°C;
BLF6G27-10
junction to case
P
L
= 10 W (CW) BLF6G27-10G
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C per section; unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.18 mA
V
DS
= 10 V; I
D
= 18 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 0.9 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 0.6 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
Min
65
1.4
-
2.7
-
0.8
328
-
Typ
-
1.9
-
-
-
-
-
3.6
Max
-
2.4
1.4
-
140
-
1256
-
Unit
V
V
µA
A
nA
S
mΩ
pF
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
3 of 15
NXP Semiconductors
BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
7. Application information
Table 7.
Application information
Mode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh
codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; Channel Bandwidth is 1.23 MHz;
f
1
= 2500 MHz; f
2
= 2600 MHz; f
3
= 2700 MHz; RF performance at V
DS
= 28 V; I
Dq
= 130 mA;
T
case
= 25
°
C; unless otherwise specified; in a class-AB production circuit.
Symbol
P
L(AV)
G
p
RL
in
η
D
ACPR
885k
ACPR
1980k
[1]
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
Conditions
P
L(AV)
= 2 W
P
L(AV)
= 2 W
P
L(AV)
= 2 W
P
L(AV)
= 2 W
[1]
[1]
Min
-
17.5
-
18
-
-
Typ Max Unit
2
19
20
-
-
-
W
dB
dB
%
dBc
dBc
−10
-
−49 −46
−64 −61
adjacent channel power ratio (1980 kHz) P
L(AV)
= 2 W
Measured within 30 kHz bandwidth.
7.1 Ruggedness in class-AB operation
The BLF6G27-10 and BLF6G27-10G are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 130 mA; P
L
= P
L(1dB)
; f = 2700 MHz.
7.2 NXP WiMAX signal
7.2.1 WiMAX signal description
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = T
g
/ T
b
= 1 / 8;
FFT = 1024; zone type = PUSC;
δ
= 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol
×
30 subchannels; P
L
= P
L(nom)
+ 3.86 dB.
Table 8.
Zone 0
Zone 0
Zone 0
Frame structure
Modulation technique
QPSK1/2
64QAM3/4
64QAM3/4
Data length
3 bit
692 bit
10000 bit
FCH
data
data
2 symbols
×
4 subchannels
2 symbols
×
26 subchannels
44 symbols
×
30 subchannels
Frame contents
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
4 of 15
NXP Semiconductors
BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
7.2.2 Graphs
001aaj351
001aaj352
16
EVM
(%)
12
25
G
p
(dB)
23
50
η
D
(%)
40
21
8
19
G
p
30
20
4
17
η
D
0
10
−1
1
P
L
(W)
10
15
10
−1
0
1
P
L(AV)
(W)
10
10
V
DS
= 28 V; I
Dq
= 130 mA; f = 2600 MHz.
V
DS
= 28 V; I
Dq
= 130 mA; f = 2600 MHz.
Fig 1.
EVM as a function of load power;
typical values
Fig 2.
Power gain and drain efficiency as function of
average load power; typical values
−20
ACPR
(dBc)
−30
001aaj353
ACPR
10M
−40
ACPR
20M
−50
ACPR
30M
−60
10
−1
1
P
L(AV)
(W)
10
V
DS
= 28 V; I
Dq
= 130 mA; f = 2600 MHz.
Fig 3.
Adjacent channel power ratio as a function of average load power; typical values
BLF6G27-10_BLF6G27-10G_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2009
5 of 15
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