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BLW85

Description
HF/vhf power transistor
CategoryDiscrete semiconductor    The transistor   
File Size110KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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HF/vhf power transistor

BLW85 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
Parts packaging codeSOT
package instructionFLANGE MOUNT, O-CRFM-F4
Contacts4
Manufacturer packaging codeSOT123A
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)9 A
Collector-emitter maximum voltage16 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-CRFM-F4
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)105 W
Minimum power gain (Gp)4.5 dB
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)650 MHz
DISCRETE SEMICONDUCTORS
DATA SHEET
BLW85
HF/VHF power transistor
Product specification
March 1993
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