DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BSR18A
PNP switching transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 28
Philips Semiconductors
Product specification
PNP switching transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
High-speed saturated switching.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complement: BSR17A.
1
handbook, halfpage
BSR18A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
MARKING
TYPE NUMBER
BSR18A
MARKING CODE
T92
Top view
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
t
off
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
T
amb
≤
25
°C
I
C
=
−10
mA; V
CE
=
−1
V
I
C
=
−10
mA; V
CE
=
−20
V; f = 100 MHz
I
Con
=
−10
mA; I
Bon
=
−1
mA; I
Boff
= 1 mA
open emitter
open base
CONDITIONS
−
−
−
−
100
250
−
MIN.
MAX.
−40
−40
−100
250
300
−
300
MHz
ns
V
V
mA
mW
UNIT
1997 May 28
2
Philips Semiconductors
Product specification
PNP switching transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
BSR18A
MAX.
−40
−40
−6
−100
−200
−100
250
+150
150
+150
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
500
UNIT
K/W
1997 May 28
3
Philips Semiconductors
Product specification
PNP switching transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
C
= 0; V
EB
=
−6
V
V
CE
=
−1
V; note 1; see Fig.2
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−50
mA
I
C
=
−100
mA
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation voltage I
C
=
−10
mA; I
B
=
−1
mA; note 1
I
C
=
−50
mA; I
B
=
−5
mA; note 1
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
=
−10
mA; I
B
=
−1
mA; note 1
I
C
=
−50
mA; I
B
=
−5
mA; note 1
I
E
= i
e
= 0; V
CB
=
−5
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−500
mV; f = 1 MHz
I
C
=
−10
mA; V
CE
=
−20
V; f = 100 MHz
I
C
=
−100 µA;
V
CE
=
−5
V; R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
60
80
100
60
30
−
−
−650
−
−
−
250
−
−
−
−
−
MIN.
BSR18A
MAX.
−50
−50
UNIT
nA
nA
300
−
−
−200
−200
−850
−950
4.5
10
−
4
mV
mV
mV
mV
pF
pF
MHz
dB
Switching times (between 10% and 90% levels);
see Fig.3
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.01.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
=
−10
mA; I
Bon
=
−1
mA; I
Boff
= 1 mA
−
−
−
−
−
−
65
35
35
300
225
75
ns
ns
ns
ns
ns
ns
1997 May 28
4
Philips Semiconductors
Product specification
PNP switching transistor
BSR18A
MGD835
handbook, full pagewidth
160
hFE
120
80
40
0
−10
−2
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
V
CE
=
−1
V.
Fig.2 DC current gain; typical value.
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MGD624
V
i
=
−5
V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270
Ω.
V
BB
= 1.9 V; V
CC
=
−3
V.
Oscilloscope input impedance Z
i
= 50
Ω.
Fig.3 Test circuit for switching times.
1997 May 28
5
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