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BTA216B-800F

Description
three quadrant triacs guaranteed commutation
CategoryAnalog mixed-signal IC    Trigger device   
File Size45KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BTA216B-800F Overview

three quadrant triacs guaranteed commutation

BTA216B-800F Parametric

Parameter NameAttribute value
MakerNXP
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Manufacturer packaging codeSOT404
Reach Compliance Codeunknown
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum rms on-state current16 A
Off-state repetitive peak voltage800 V
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationSINGLE
Trigger device typeTRIAC
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
GENERAL DESCRIPTION
Glass passivated high commutation
triacs in a plastic envelope intended
for use in circuits where high static and
dynamic dV/dt and high dI/dt can
occur. These devices will commutate
the full rated rms current at the
maximum rated junction temperature,
without the aid of a snubber.
BTA216 series B
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BTA216-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500B
500
16
140
600B
600
16
140
800B
800
16
140
V
A
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2
gate
main terminal 2
1 23
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
mb
99 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
-500
500
1
MAX.
-600
600
1
16
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
140
150
98
100
2
5
5
0.5
150
125
A
A
A
2
s
A/µs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997
1
Rev 1.200
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