BUK9610-55A datasheet, PDF - EEWORLD Datasheet

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BUK9610-55A: Descriptiontrenchmos logic level fet; CategoryDiscrete semiconductor The transistor; File Size130KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BUK9610-55A Overview

trenchmos logic level fet

BUK9610-55A Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	PLASTIC, D2PAK-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	333 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (Abs) (ID)	0.075 A
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.011 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	200 W
Maximum pulsed drain current (IDM)	400 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BUK9510-55A; BUK9610-55A

TrenchMOS™ logic level FET

Rev. 01 — 20 August 2001

Product data

1. Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

TrenchMOS™

technology, featuring very low on-state resistance.

Product availability:

BUK9510-55A in SOT78 (TO-220AB)

BUK9610-55A in SOT404 (D

-PAK).

2. Features

TrenchMOS™ technology

Q101 compliant

175

°C

rated

Logic level compatible.

3. Applications

Automotive and general purpose power switching:

12 V and 24 V loads

Motors, lamps and solenoids.

4. Pinning information

Table 1:

Pinning - SOT78 and SOT404, simpliﬁed outline and symbol

Simpliﬁed outline

Description

gate (g)

drain (d)

source (s)

mounting base;

connected to drain (d)

Symbol

MBB076

MBK116

MBK106

1 2 3

SOT78 (TO-220AB)

SOT404 (D

-PAK)

TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.

BUK9610-55A Related Products

	BUK9610-55A	BUK9610-55A,118
Description	trenchmos logic level fet	N-channel TrenchMOS logic level FET
Is it Rohs certified?	conform to	conform to
package instruction	PLASTIC, D2PAK-3	PLASTIC, D2PAK-3
Contacts	3	3
Reach Compliance Code	not_compliant	_compli
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	333 mJ	333 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V	55 V
Maximum drain current (Abs) (ID)	0.075 A	0.075 A
Maximum drain current (ID)	75 A	100 A
Maximum drain-source on-resistance	0.011 Ω	0.011 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	200 W	200 W
Maximum pulsed drain current (IDM)	400 A	400 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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