BUK9614-30 datasheet, PDF - EEWORLD Datasheet

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BUK9614-30: Descriptiontrenchmos transistor logic level fet; CategoryDiscrete semiconductor The transistor; File Size46KB，8 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUK9614-30 Overview

trenchmos transistor logic level fet

BUK9614-30 Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	ESD PROTECTED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	125 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	69 A
Maximum drain-source on-resistance	0.014 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	240 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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Philips Semiconductors

Product specification

TrenchMOS™ transistor

Logic level FET

GENERAL DESCRIPTION

N-channel enhancement mode logic

level field-effect power transistor in a

plastic envelope suitable for surface

mounting using ’trench’ technology.

The device features very low on-state

resistance and has integral zener

diodes giving ESD protection up to

2kV. It is intended for use in

automotive and general purpose

switching applications.

BUK9614-30

QUICK REFERENCE DATA

SYMBOL

tot

DS(ON)

PARAMETER

Drain-source voltage

Drain current (DC)

Total power dissipation

Junction temperature

Drain-source on-state

resistance

= 5 V

MAX.

125

175

UNIT

˚C

mΩ

PINNING - SOT404

gate

drain

source

drain

DESCRIPTION

PIN CONFIGURATION

SYMBOL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

DGR

±V

tot

stg

, T

PARAMETER

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current (DC)

Drain current (pulse peak value)

Total power dissipation

Storage & operating temperature

CONDITIONS

= 20 kΩ

= 25 ˚C

= 100 ˚C

= 25 ˚C

MIN.

- 55

MAX.

240

125

175

UNIT

˚C

THERMAL RESISTANCES

SYMBOL

th j-mb

th j-a

PARAMETER

Thermal resistance junction to

mounting base

Thermal resistance junction to

ambient

CONDITIONS

minimum footprint, FR4

board

TYP.

MAX.

1.2

UNIT

K/W

ESD LIMITING VALUE

SYMBOL

PARAMETER

Electrostatic discharge capacitor

voltage

CONDITIONS

Human body model

(100 pF, 1.5 kΩ)

MIN.

MAX.

UNIT

December 1997

Rev 1.100

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