DHH55-36N1F
Sonic Fast Recovery Diode
V
RRM
I
FAV
t
rr
=
2x 1800 V
=
=
60 A
230 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Phase leg
Part number
DHH55-36N1F
Backside: Isolated
1
2
5
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
i4-Pac
●
Isolation Voltage: 3000 V~
●
Industry convenient outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
●
Soldering pins for PCB mounting
●
Backside: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160916d
© 2016 IXYS all rights reserved
DHH55-36N1F
Fast Diode
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
d = 0.5
T
VJ
= 150 °C
1.28
12
0.20
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 1200 V f = 1 MHz
I
F
=
60 A; V
R
= 1200 V
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 100 °C
T
VJ
= 25 °C
T
VJ
= 100 °C
-di
F
/dt = 800 A/µs
28
60
70
230
350
210
700
V
mΩ
K/W
W
A
pF
A
A
ns
ns
min.
typ.
max. Unit
1800
V
1800
200
2
2.04
2.57
2.03
2.73
60
V
µA
mA
V
V
V
V
A
max. non-repetitive reverse blocking voltage
V
R
= 1800 V
V
R
= 1800 V
I
F
=
I
F
=
60 A
60 A
forward voltage drop
I
F
= 120 A
I
F
= 120 A
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
t
rr
average forward current
T
C
= 50 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
0.6 K/W
reverse recovery time
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160916d
© 2016 IXYS all rights reserved
DHH55-36N1F
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting force with clip
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
i4-Pac
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
70
150
125
150
Unit
A
°C
°C
°C
g
N
mm
mm
V
V
9
20
5.5
5.1
3000
2500
120
Product Marking
UL listed
Logo
IXYS
Zyyww
®
ISOPLUS®
Part No.
Assembly Line
Date Code
Assembly Code
XXXXXXXXX
abcd
Ordering
Standard
Ordering Number
DHH55-36N1F
Marking on Product
DHH55-36N1F
Delivery Mode
Tube
Quantity
25
Code No.
500173
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
* on die level
T
VJ
= 150 °C
V
0 max
R
0 max
1.28
9.5
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160916d
© 2016 IXYS all rights reserved
DHH55-36N1F
Outlines i4-Pac
D2
A
E
A2
E1
Dim.
A
A1
A2
b
b2
b4
c
D
D1
D2
D3
E
E1
e
L
L1
Q
R
W
Millimeter
min
max
4.83
5.21
2.59
3.00
1.17
2.16
1.14
1.40
1.47
1.73
2.54
2.79
0.51
0.74
20.80
21.34
14.99
15.75
1.65
2.03
20.30
20.70
19.56
20.29
16.76
17.53
7.62 BSC
19.81
21.34
2.11
2.59
5.33
6.20
4.57
2.54
0.10
-
Inches
min
max
0.190
0.205
0.102
0.118
0.046
0.085
0.045
0.055
0.058
0.068
0.100
0.110
0.020
0.029
0.819
0.840
0.590
0.620
0.065
0.080
0.799
0.815
0.770
0.799
0.660
0.690
0.300 BSC
0.780
0.840
0.083
0.102
0.210
0.244
0.100
0.180
0.004
-
R
Q
L
L1
D3
1
3
5
c
A1
W
2x e
3x b
b4
D1
D
2x b2
Die konvexe Form des Substrates ist typ. < 0.05 mm über
der Kunststoffoberfläche der Bauteilunterseite
The convexbow of substrate is typ. < 0.05 mm over plastic
surface level ofdevice bottom side
1
2
5
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160916d
© 2016 IXYS all rights reserved
DHH55-36N1F
Fast Diode
140
120
100
30
40
T
VJ
= 100°C
V
R
= 1200 V
80
I
F
= 60 A
20
I
F
= 60 A
100
T
VJ
= 100°C
V
R
= 1200 V
I
F
80
[A]
60
40
T
VJ
= 125°C
20
T
VJ
= 25°C
0
0
1
2
3
Q
r
[nC]
10
I
RM
60
[A]
40
20
0
100
0
1000
0
400
800
1200
1600
V
F
[V]
Fig. 1 Typ. rward current
I
F
versus V
F
2.0
1400
-di
F
/dt
[A/µs]
Fig. 2 Typ. reverse recovery charge
Q
r
versus -di
F
/dt
150
T
VJ
= 100°C
1200
V
R
= 1200 V
120
1000
-di
F
/dt
[A/µs]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
2.5
T
VJ
= 100°C
V
R
= 1200 V
2.0
1.5
t
fr
V
FR
90
I
F
= 60 A
1.5
t
rr
800
K
f
1.0
I
RM
Q
r
[µs]
[ns]
600
400
30
200
V
FR
[V]
60
t
fr
1.0
0.5
0.5
0.0
0
40
80
120
160
0
0
400
800
1200
1600
0
0
200
400
600
800
0.0
1000
T
VJ
[°C]
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
-di
F
/dt
[A/µs]
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
di
F
/dt
[A/µs]
Fig. 6 Typ. peak forward voltage
V
FR
& typ. forward recovery
time t
fr
versus di
F
/dt
10
0
Constants for Z
thJC
calculation:
Z
thJC
10
-1
i
1
2
3
4
R
thi
(K/W)
0.212
0.248
0.063
0.077
t
i
(s)
0.0055
0.0092
0.0007
0.0391
[K/W]
10
-2
10
-3
10
-2
10
-1
10
0
10
1
t
[s]
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160916d
© 2016 IXYS all rights reserved
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