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BLF6G10LS-200R,118

Description
transistors RF mosfet ldmos tns
CategoryDiscrete semiconductor    The transistor   
File Size98KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BLF6G10LS-200R,118 Overview

transistors RF mosfet ldmos tns

BLF6G10LS-200R,118 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-F2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
Maximum drain current (ID)49 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature225 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
BLF6G10LS-200R
Power LDMOS transistor
Rev. 01 — 21 January 2008
Preliminary data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
869 to 894
V
DS
(V)
28
P
L(AV)
(W)
40
G
p
(dB)
20
η
D
(%)
27.5
ACPR
(dBc)
−40
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an I
Dq
of 1400 mA:
N
Average output power = 40 W
N
Power gain = 20 dB
N
Efficiency = 27.5 %
N
ACPR =
−40
dBc
I
Easy power control
I
Integrated ESD protection
I
Enhanced ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (800 MHz to 1000 MHz)
I
Internally matched for ease of use
I
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)

BLF6G10LS-200R,118 Related Products

BLF6G10LS-200R,118 BLF6G10LS-200R,112
Description transistors RF mosfet ldmos tns transistors RF mosfet ldmos tns
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker NXP NXP
package instruction SMALL OUTLINE, R-PDSO-F2 ROHS COMPLIANT, CERAMIC PACKAGE-2
Contacts 2 2
Reach Compliance Code unknown compli
ECCN code EAR99 EAR99
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 65 V 65 V
Maximum drain current (ID) 49 A 49 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-F2 R-PDSO-F2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 225 °C 225 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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