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BZG03C12-TR3/6

Description
DIODE 12 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC, ROHS COMPLIANT, PACKAGE-2, Voltage Regulator Diode
CategoryDiscrete semiconductor    diode   
File Size66KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

BZG03C12-TR3/6 Overview

DIODE 12 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC, ROHS COMPLIANT, PACKAGE-2, Voltage Regulator Diode

BZG03C12-TR3/6 Parametric

Parameter NameAttribute value
Parts packaging codeDO-214AC
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation3 W
Nominal reference voltage12 V
surface mountYES
technologyZENER
Terminal formC BEND
Terminal locationDUAL
Maximum voltage tolerance5.4%
Working test current50 mA
Base Number Matches1
BZG03C-Series
Vishay Semiconductors
Zener Diodes
Features
High reliability
Voltage range 10 V to 270 V
Fits onto 5 mm SMD footpads
Wave and reflow solderable
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
15811
Applications
• Voltage stabilization
Mechanical Data
Case:
DO-214AC
Weight:
approx. 77 mg
Packaging codes/options:
TR/1.5K 7" reel
TR3/6K 13" reel 6K/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Non repetitive peak surge
power dissipation
Junction temperature
Storage temperature range
Test condition
R
thJA
< 25 K/W, T
amb
= 100 °C
R
thJA
< 100 K/W, T
amb
= 50 °C
t
p
= 100
μs
sq.pulse, T
j
= 25 °C
prior to surge
Symbol
P
diss
P
diss
P
ZSM
T
j
T
stg
Value
3
1.25
600
150
- 65 to + 150
Unit
W
W
W
°C
°C
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction lead
Mounted on epoxy-glass hard
tissue, fig. 1a
Junction ambient
Mounted on epoxy-glass hard
tissue, fig. 1b
Mounted on Al-oxid-ceramic
(Al
2
O
3
), fig. 1b
Test condition
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 0.5 A
Symbol
V
F
Min.
Typ.
Max.
1.2
Unit
V
www.vishay.com
1
For technical questions within your region, please contact one of the following: Document Number
85593
Rev. 1.8, 24-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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