Bulletin PD-20436 07/04
MBRS130TRPbF
SCHOTTKY RECTIFIER
1 Amp
I
F(AV)
= 1.0 Amp
V
R
= 30V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ t
p
= 5 µs sine
V
F
T
J
@ 1.0Apk, T
J
= 125°C
range
Description/ Features
Units
A
V
A
V
°C
The MBRS130TRPbF surface-mount Schottky rectifier has
been designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lad-Free (PbF" suffix)
Value
1.0
30
230
0.42
- 55 to 125
Case Styles
MBRS130TRPbF
SMB
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1
MBRS130TRPbF
Bulletin PD-20436 07/04
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
MBRS130TRPbF
30
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current, T
J
= 25°C
Non- Repetitive Avalanche Energy
Repetitive Avalanche Current
Value
1.0
870
50
3.0
1.0
Units Conditions
A
A
50% duty cycle @ T
L
= 147 °C, rectangular wave form
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
mJ
A
T
J
= 25 °C, I
AS
= 1A, L = 6mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
Following any rated
load condition and
with rated V
RRM
applied
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
(1)
Value
0.6
0.67
0.42
0.52
Units
V
V
V
V
mA
mA
mA
pF
nH
V/µs
@ 1A
@ 2A
@ 1A
@ 2A
T
J
=
25 °C
T
J
= 100 °C
T
J
= 125 °C
Conditions
T
J
= 25 °C
T
J
= 125 °C
I
RM
Max. Reverse Leakage Current (1)
0.5
5.0
15
V
R
= rated V
R
C
T
L
S
Max. Junction Capacitance
Typical Series Inductance
200
2.0
10000
V
R
= 5V
DC
(test signal range 100KHz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
(Rated V
R
)
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range (*)
Max. Storage Temperature Range
(**)
80
°C/W DC operation
Value
- 55 to 125
- 55 to 150
25
Units
°C
°C
°C/W DC operation
Conditions
R
thJL
Max. Thermal Resistance
Junction to Lead
R
thJA
Max. Thermal Resistance
Junction to Ambient
wt
Approximate Weight
Case Style
Device Marking
(*) dPtot
0.10 (0.003) g (oz.)
SMB
IR13
Similar to DO-214AA
1
<
thermal runaway condition for a diode on its own heatsink
dTj
Rth (j-a)
(**) Mounted 1 inch square PCB
2
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MBRS130TRPbF
Bulletin PD-20436 07/04
10
T
J
= 125°C
10
Reverse Curent - I
R
(mA)
1
100°C
75°C
50°C
0.1
0.01
25°C
0.001
Instantaneous Forward Current - I
F
(A)
T = 125˚C
J
T = 25˚C
J
0.0001
0
10
20
30
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
1
1000
Junction Capa citance - C
T
(pF
)
T = 25°C
J
100
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
0
10
20
30
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
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MBRS130TRPbF
Bulletin PD-20436 07/04
130
Allowable Lead Temperature (°C)
120
110
100
90
80
see note (2)
Square wave (D = 0.50)
Rated Vr applied
Average Power Loss (Watts)
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.2 0.4 0.6 0.8
1
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
DC
70
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
Average Forward Current - I
F(AV)
(A)
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
1.2 1.4 1.6
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Non-repetitive Surge Current - I
FSM
(A)
1000
100
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
10
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
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MBRS130TRPbF
Bulletin PD-20436 07/04
Outline Table
Device Marking: IR13G
CATHODE
ANODE
2.15 (.085)
1.80 (.071)
3.80 (.150)
3.30 (.130)
1
2
4.70 (.185)
4.10 (.161)
1
POLARITY
2 PART NUMBER
2.40 (.094)
1.90 (.075)
1.30 (.051)
0.76 (.030)
0.30 (.012)
0.15 (.006)
5.60 (.220)
5.00 (.197)
2.5 TYP.
(.098 TYP.)
SOLDERING PAD
2.0 TYP.
(.079 TYP.)
4.2 (.165)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR13
IR13
VOLTAGE
CURRENT
IR LOGO
PYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
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