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FP209-TL

Description
Power Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PCP5, 7 PIN
CategoryDiscrete semiconductor    The transistor   
File Size35KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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FP209-TL Overview

Power Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PCP5, 7 PIN

FP209-TL Parametric

Parameter NameAttribute value
MakerSANYO
package instructionSMALL OUTLINE, R-PSSO-G3
Contacts7
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage25 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE)140
JESD-30 codeR-PSSO-G3
Number of components2
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment1.1 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
Ordering number : EN4536A
FP209
FP209
Features
NPN Epitaxial Planar Silicon Transistor
Driver Applications
Composite type with 2 transistors (NPN) contained in one package, facilitating high-density mounting.
The FP209 is formed with 2 chips being equivalent to the 2SD1621, placed in one package.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Mounted on a ceramic board (250mm
2
!0.8mm)
1unit
Mounted on a ceramic board (250mm
!0.8mm)
2
Conditions
Ratings
30
25
6
2
5
400
0.8
1.1
150
--55 to +150
Unit
V
V
V
A
A
mA
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=20V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=100mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=1.5A, IB=75mA
IC=1.5A, IB=75mA
IC=10µA, IE=0A
IC=1mA, RBE=∞
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
30
25
6
60
500
25
140
150
19
0.18
0.85
0.4
1.2
Ratings
min
typ
max
100
100
400
MHz
pF
V
V
V
V
V
ns
ns
ns
Unit
nA
nA
Marking : 209
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3005EA MS IM / 52098HA (KT) / 53094TH (KOTO) BX-0215 No.4536-1/4

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