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BZX85C4V7T50A

Description
Zener Diode, 4.7V V(Z), 5%, 1.3W, Silicon, Unidirectional, DO-41,
CategoryDiscrete semiconductor    diode   
File Size273KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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BZX85C4V7T50A Overview

Zener Diode, 4.7V V(Z), 5%, 1.3W, Silicon, Unidirectional, DO-41,

BZX85C4V7T50A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance13 Ω
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1.3 W
Certification statusNot Qualified
Nominal reference voltage4.7 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance5%
Working test current45 mA
Base Number Matches1
BZX85C 3V3 - BZX85C 33 Series
BZX85C 3V3 - 33 Series 1.3 Watt Zeners
Absolute Maximum Ratings*
Symbol
T
STG
T
J
TA = 25°C unless otherwise noted
Tolerance: C = 5%
Parameter
Storage Temperature Range
Maximum Junction Operating Temperature
Lead Temperature (1/16” from case for 10
seconds)
Total Device Dissipation
Derate above 25°C
Value
-65 to +200
+ 200
+ 230
1.3
10.4
Units
°C
°C
°C
W
mW/°C
P
D
*
These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
DO-41
COLOR BAND DENOTES CATHODE
Electrical Characteristics
Device
BZX85C 3V3
BZX85C 3V6
BZX85C 3V9
BZX85C 4V3
BZX85C 4V7
BZX85C 5V1
BZX85C 5V6
BZX85C 6V2
BZX85C 6V8
BZX85C 7V5
BZX85C 8V2
BZX85C 9V1
BZX85C 10
BZX85C 11
BZX85C 12
BZX85C 13
BZX85C 15
BZX85C 16
BZX85C 18
BZX85C 20
BZX85C 22
BZX85C 24
BZX85C 27
BZX85C 30
BZX85C 33
TA = 25°C unless otherwise noted
V
Z
(V)
(Ω)
20
15
15
13
13
10
7.0
4.0
3.5
3.0
5.0
5.0
7.0
8.0
9.0
10
15
15
20
24
25
25
30
30
35
Z
Z
@
(mA)
80
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
10
8.0
8.0
8.0
I
ZT
Z
ZK
(Ω)
400
500
500
500
600
500
400
300
300
200
200
200
200
300
350
400
500
500
500
600
600
600
750
1,000
1,200
@
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.25
0.25
0.25
I
ZK
V
R
(V)
1.0
1.0
1.0
1.0
1.5
2.0
2.0
3.0
4.0
4.5
5.0
6.5
7.0
7.7
8.4
9.1
10.5
11
12.5
14
15.5
17
19
21
23
@
(µA)
µ
60
30
5.0
3.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
I
R
I
SURGE
(mA)
1,380
1,260
1,190
1,070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
170
150
135
(mA)
276
252
234
217
193
178
162
146
133
121
110
100
91
83
76
69
61
57
50
45
41
38
34
30
27
I
ZRM
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
V
F
Foward Voltage = 1.2 V Maximum @ I
F
= 200 mA for all BZX85 series
2001
Fairchild Semiconductor Corporation
BZX85 Series Rev. A1

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