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3.0SMCJ30-T3

Description
Trans Voltage Suppressor Diode, 3000W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, PLASTIC, SMC, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size309KB,5 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Download Datasheet Parametric View All

3.0SMCJ30-T3 Overview

Trans Voltage Suppressor Diode, 3000W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, PLASTIC, SMC, 2 PIN

3.0SMCJ30-T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionR-PDSO-C2
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Maximum breakdown voltage40.7 V
Minimum breakdown voltage33.3 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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Dim
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B
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Min
Max
5.59
6.22
6.60
7.11
2.75
3.25
0.152 0.305
7.75
8.13
2.00
2.62
0.051 0.203
0.76
1.27
In mm
Min
Max






0.220 0.245
0.260 0.280
0.108 0.128
0.006 0.012
0.305 0.320
0.079 0.103
0.002 0.008
0.030 0.05
In inch



























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