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AT-42086-TR2

Description
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, 86, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size62KB,5 Pages
ManufacturerAVAGO
Websitehttp://www.avagotech.com/
Download Datasheet Parametric Compare View All

AT-42086-TR2 Overview

C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, 86, 4 PIN

AT-42086-TR2 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerAVAGO
package instructionDISK BUTTON, O-PRDB-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW NOISE
Maximum collector current (IC)0.08 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
highest frequency bandC BAND
JESD-30 codeO-PRDB-G4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)8000 MHz
Base Number Matches1
AT-42086
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-42086 is a general purpose NPN bipolar
transistor that offers excellent high frequency perfor-
mance. The AT-42086 is housed in a low cost surface
mount .085" diameter plastic package. The 4 micron
emitter-to-emitter pitch enables this transistor to be
used in many different functions. The 20 emitter finger
interdigitated geometry yields a medium sized transis-
tor with impedances that are easy to match for low
noise and medium power applications. Applications
include use in wireless systems as an LNA, gain stage,
buffer, oscillator, and mixer. An optimum noise match
near 50Ω up to 1 GHz, makes this device easy to use as
a low noise amplifier.
The AT-42086 bipolar transistor is fabricated using
Avago’s 10 GHz f
T
Self-Aligned-Transistor (SAT)
process. The die is nitride passivated for surface
protection. Excellent device uniformity, performance
and reliability are produced by the use of ion-implanta-
tion, self-alignment techniques, and gold metalization
in the fabrication of this device.
Features
High Output Power:
20.5 dBm Typical P
1 dB
at 2.0 GHz
High Gain at 1 dB Compression:
13.5 dB Typical G
1 dB
at 2.0 GHz
Low Noise Figure:
1.9 dB Typical NF
O
at 2.0 GHz
High Gain-Bandwidth Product: 8.0 GHz Typical f
T
Surface Mount Plastic Package
Tape-and-Reel Packaging Option Available
• Lead-free Option Available
86 Plastic Package
Pin Connections
EMITTER
4
420
BASE
1
COLLECTOR
3
2
EMITTER

AT-42086-TR2 Related Products

AT-42086-TR2 AT-42086-BLK AT-42086-TR1
Description C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, 86, 4 PIN C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, 86, 4 PIN C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, 86, 4 PIN
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
Maker AVAGO AVAGO AVAGO
package instruction DISK BUTTON, O-PRDB-G4 DISK BUTTON, O-PRDB-G4 DISK BUTTON, O-PRDB-G4
Contacts 4 4 4
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Other features HIGH RELIABILITY, LOW NOISE HIGH RELIABILITY, LOW NOISE HIGH RELIABILITY, LOW NOISE
Maximum collector current (IC) 0.08 A 0.08 A 0.08 A
Collector-emitter maximum voltage 12 V 12 V 12 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 30 30 30
highest frequency band C BAND C BAND C BAND
JESD-30 code O-PRDB-G4 O-PRDB-G4 O-PRDB-G4
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.5 W 0.5 W 0.5 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING
Terminal location RADIAL RADIAL RADIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 8000 MHz 8000 MHz 8000 MHz
Base Number Matches 1 1 1
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