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2SK2887TL

Description
mosfet N-CH 200v 3A dpak
CategoryDiscrete semiconductor    The transistor   
File Size147KB,5 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SK2887TL Overview

mosfet N-CH 200v 3A dpak

2SK2887TL Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-63
package instructionCPT3, SC-63, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)3 A
Maximum drain current (ID)3 A
Maximum drain-source on-resistance0.9 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee2
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)20 W
Maximum pulsed drain current (IDM)12 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Copper (Sn98Cu2)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Transistors
Switching (200V, 3A)
2SK2887
FFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V
GSS
) guaran-
teed to be
±30V.
5) Easily designed drive circuits.
6) Easy to parallel.
FStructure
Silicon N-channel
MOSFET
FExternal
dimensions (Units: mm)
FAbsolute
maximum ratings (Ta = 25_C)
FPackaging
specifications
166

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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