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BFR 182T E6327

Description
transistor RF npn 12v SC-75
Categorysemiconductor    Discrete semiconductor   
File Size72KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BFR 182T E6327 Overview

transistor RF npn 12v SC-75

BFR182T
NPN Silicon RF Transistor
Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
f
T
= 8 GHz
F
= 1.2 dB at 900 MHz
3
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
2)
R
thJS
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA



2
1
VPS05996
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BFR182T
Maximum Ratings
Parameter
Marking
RGs
1=B
Pin Configuration
2=E
3=C
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Package
SC75
Value
12
20
20
2
35
4
250
150
mW
°C
mA
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
S
75°C
1)
-65 ... 150
-65 ... 150

300
K/W
1
Aug-09-2001
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