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BA979-GS08

Description
diode RF pin sod80
CategoryDiscrete semiconductor    diode   
File Size96KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BA979-GS08 Overview

diode RF pin sod80

BA979-GS08 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerVishay
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationATTENUATOR
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Maximum diode capacitance0.5 pF
Diode component materialsSILICON
Maximum diode forward resistance50 Ω
Diode typePIN DIODE
frequency bandHIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 codeDO-213AA
JESD-30 codeO-LELF-R2
JESD-609 codee2
Minority carrier nominal lifetime4 µs
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)250
Certification statusNot Qualified
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperature40
Base Number Matches1
BA979, BA979S
www.vishay.com
Vishay Semiconductors
RF PIN Diodes - Single in QuadroMELF SOD-80
FEATURES
• Wide frequency range 10 MHz to 1 GHz
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
APPLICATIONS
• Current controlled
attenuators
HF
resistance
in
adjustable
MECHANICAL DATA
Case:
QuadroMELF SOD-80
Weight:
approx. 34 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
BA979
BA979S
TYPE
DIFFERENTIATION
z
r
> 5 k
z
r
> 9 k
ORDERING CODE
BA979-GS18 or BA979-GS08
BA979S-GS18 or BA979S-GS08
TYPE MARKING
-
-
INTERNAL
CONSTRUCTION
Single diode
Single diode
REMARKS
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PART
Reverse voltage
Forward continuous current
TEST CONDITION
SYMBOL
V
R
I
F
VALUE
30
50
UNIT
V
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
on PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
R
thJA
T
j
T
stg
VALUE
500
125
- 55 to + 150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Diode capacitance
Differential forward resistance
Reverse impedance
Minority carrier lifetime
TEST CONDITION
I
F
= 20 mA
V
R
= 30 V
f = 100 MHz, V
R
= 0 V
f = 100 MHz, I
F
= 1.5 mA
f = 100 MHz, V
R
= 0 V
I
F
= 10 mA, I
R
= 10 mA
BA979
BA979S
PART
SYMBOL
V
F
I
R
C
D
r
f
z
r
z
r
5
9
4
MIN.
TYP.
MAX.
1
0.05
0.5
50
UNIT
V
μA
pF
k
k
μs
Rev. 1.6, 21-May-12
Document Number: 85533
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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