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3DFN32G08VS8633MS

Description
Flash, 4GX8, PDSO50, 0.50 MM PITCH, SOP-50
Categorystorage    storage   
File Size216KB,2 Pages
Manufacturer3D PLUS
Download Datasheet Parametric View All

3DFN32G08VS8633MS Overview

Flash, 4GX8, PDSO50, 0.50 MM PITCH, SOP-50

3DFN32G08VS8633MS Parametric

Parameter NameAttribute value
Objectid1383027511
package instructionSSOP,
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
JESD-30 codeR-PDSO-G50
length19 mm
memory density34359738368 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals50
word count4294967296 words
character code4000000000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize4GX8
Package body materialPLASTIC/EPOXY
encapsulated codeSSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE, SHRINK PITCH
Parallel/SerialPARALLEL
Programming voltage3.3 V
Maximum seat height12.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
width13.64 mm
MEMORY MODULE
FLASH Nand 4Gx8-SOP
Flash Memory
MODULE
3D FN32G08VS8633
32Gbit Flash Nand organized as 4Gx8, based on 512MGx8
Pin Assignment (Top View)
SOP 50 (Pitch : 0.50 mm)
Features
- Organization
-Memory Cell Array (512M+16.384KM)bitx8.
- Automatic Program and Erase
Page Program: (2K+64) Byte/Bank
Block Erase: (128K+4K) Byte/Bank
- Single +3.3
0.3V power supply operation.
- Page Read Operation
Random READ: 25s (Max.)
Sequential READ: 25ns (Min.)
- Fast write Cycle Time
Program page: 220s (Typ.)
Block Erase Time: 1.5ms (Typ.)
Command/Address/Data Multiplexed I/O Port
- Hardware Data Protection
Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology
Endurance: 100K Program/Erase Cycles
Data Retention: 10 Years
- Command Register Operation
- Intelligent Copy-Back Operation
- Power-On auto-read enabled
General Description
The 3DFN32G08VS8633 is a high-density non-volatile CMOS NAND FLASH
module organized as 8x512Mx8bit.
Using high performance and high-reliability CMOS technology chips,
stacking with the well-known 3D Plus MCM-V technology, this FLASH
memory module provides a cost-effective solution for low power and high-
capacity non-volatile memory data storage needs, such as voice recording
and image file memory for still camera.
Each device of the module is a 4Gbit (with spare 128Mbit) NAND FLASH,
organized as 512Mx8bit, and can be accessed by activating the associated
control signal (#CEn, #Wen, #Ren). A program operation programs the 2112-
bytex8 page in typical 300µs and an erase operation can be performed in
typical 2ms on a 128K-byte block. Data in the data page can be read out at
30ns cycle time per byte. The I/O pins serve as the ports for address and
data input/output as well as command input. The on-chip write controller
automates all program and erase functions including pulse repetition, where
required, and internal verification and margining of data. Even the write-
intensive system can take advantage of the 3DFN32G08VS8633 extended
reliability of 100K program/erase cycles by providing ECC (Error Correcting
Code) with real time mapping-out algorithm.
The 3DFN32G08VS8633 module is package in a 50 SOP Package and is
available for Commercial and Industrial or military temperature range.
FUNCTIONAL BLOCK DIAGRAM
(All other signals are common to the eights memories)
FLASH Memory Module
PRELIMINARY
3D Plus SA reserves the right to cancel product or specifications without notice
3DFP-0633-REV 1-AUG. 2013

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