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NM93C06LN

Description
256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
Categorystorage    storage   
File Size108KB,13 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

NM93C06LN Overview

256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)

NM93C06LN Parametric

Parameter NameAttribute value
Parts packaging codeDIP
package instructionDIP, DIP8,.3
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
Other features40 YEARS OF DATA RETENTION
Maximum clock frequency (fCLK)0.25 MHz
Data retention time - minimum40
Durability1000000 Write/Erase Cycles
JESD-30 codeR-PDIP-T8
length9.817 mm
memory density256 bi
Memory IC TypeEEPROM
memory width16
Number of functions1
Number of terminals8
word count16 words
character code16
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16X16
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP8,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialSERIAL
power supply3/5 V
Certification statusNot Qualified
Maximum seat height5.08 mm
Serial bus typeMICROWIRE
Maximum standby current0.00001 A
Maximum slew rate0.001 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width7.62 mm
Maximum write cycle time (tWC)15 ms
write protectSOFTWARE
Base Number Matches1
NM93C06 256-Bit Serial CMOS EEPROM
(MICROWIRE
TM
Synchronous Bus)
February 2000
NM93C06
256-Bit Serial CMOS EEPROM
(MICROWIRE™ Synchronous Bus)
General Description
NM93C06 is a 256-bit CMOS non-volatile EEPROM organized as
16 x 16-bit array. This device features MICROWIRE interface
which is a 4-wire serial bus with chipselect (CS), clock (SK), data
input (DI) and data output (DO) signals. This interface is compat-
ible to many of standard Microcontrollers and Microprocessors.
There are 7 instructions implemented on the NM93C06 for various
Read, Write, Erase, and Write Enable/Disable operations. This
device is fabricated using Fairchild Semiconductor floating-gate
CMOS process for high reliability, high endurance and low power
consumption.
“LZ” and “L” versions of NM93C06 offer very low standby current
making them suitable for low power applications. This device is
offered in both SO and TSSOP packages for small space consid-
erations.
Features
I
Wide V
CC
2.7V - 5.5V
I
Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
I
No Erase instruction required before Write instruction
I
Self timed write cycle
I
Device status during programming cycles
I
40 year data retention
I
Endurance: 1,000,000 data changes
I
Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
Functional Diagram
CS
SK
DI
INSTRUCTION
REGISTER
V
CC
INSTRUCTION
DECODER
CONTROL LOGIC
AND CLOCK
GENERATORS
ADDRESS
REGISTER
HIGH VOLTAGE
GENERATOR
AND
PROGRAM
TIMER
DECODER
EEPROM ARRAY
16
READ/WRITE AMPS
16
V
SS
DATA IN/OUT REGISTER
16 BITS
DO
DATA OUT BUFFER
© 2000 Fairchild Semiconductor International
NM93C06 Rev. E
1
www.fairchildsemi.com
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