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SM3J45

Description
AC POWER CONTROL APPLICATIONS
CategoryAnalog mixed-signal IC    Trigger device   
File Size211KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

SM3J45 Overview

AC POWER CONTROL APPLICATIONS

SM3J45 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
Critical rise rate of commutation voltage - minimum value10 V/us
Critical rise rate of minimum off-state voltage100 V/us
Maximum DC gate trigger current20 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current30 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current3 A
Maximum repetitive peak off-state leakage current20 µA
Off-state repetitive peak voltage600 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeTRIAC
SM3G45,SM3J45
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM3G45,SM3J45
AC POWER CONTROL APPLICATIONS
l
Repetitive Peak Off−State Voltage : V
DRM
= 400, 600V
l
R.M.S ON−State Current
l
High Commutating (dv / dt)
: I
T (RMS)
= 3A
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage
SM3G45
SM3J45
SYMBOL
V
DRM
I
T (RMS)
I
TSM
I t
di / dt
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
2
RATING
400
600
3
30 (50Hz)
33 (60Hz)
4.5
50
5
0.5
10
2
−40~125
−40~125
UNIT
V
A
A
A s
A / µs
W
W
V
A
°C
°C
2
R.M.S On−State Current
(Full Sine Waveform Tc = 111°C)
Peak One Cycle Surge On-State
Current (Non−Repetitive)
I t Limit Value
Critical Rate of Rise of
On-State Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
2
JEDEC
JEITA
TOSHIBA
Weight: 2.0g
TO−220AB
13−10G1A
1
2001-07-13

SM3J45 Related Products

SM3J45 SM3G45
Description AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS
Is it Rohs certified? incompatible incompatible
Maker Toshiba Semiconductor Toshiba Semiconductor
Parts packaging code TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknown
Shell connection MAIN TERMINAL 2 MAIN TERMINAL 2
Configuration SINGLE SINGLE
Critical rise rate of commutation voltage - minimum value 10 V/us 10 V/us
Critical rise rate of minimum off-state voltage 100 V/us 100 V/us
Maximum DC gate trigger current 20 mA 20 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V
Maximum holding current 30 mA 30 mA
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum rms on-state current 3 A 3 A
Maximum repetitive peak off-state leakage current 20 µA 20 µA
Off-state repetitive peak voltage 600 V 400 V
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Trigger device type TRIAC TRIAC
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