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SQ1238BCHIP

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt
File Size105KB,2 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

SQ1238BCHIP Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt

SQ1238BCHIP Parametric

Parameter NameAttribute value
Objectid1404846321
package instructionX-XUUC-N
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresVERY HIGH Q
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio3
Nominal diode capacitance33 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeX-XUUC-N
Number of components1
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Certification statusNot Qualified
minimum quality factor700
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2e-8 µA
Reverse test voltage25 V
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Varactor Diode ClassificationABRUPT

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