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SQ1213C

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 1.8pF C(T), 30V, Silicon, Abrupt
File Size105KB,2 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

SQ1213C Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 1.8pF C(T), 30V, Silicon, Abrupt

SQ1213C Parametric

Parameter NameAttribute value
Objectid1404846228
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresVERY HIGH Q
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance2%
Minimum diode capacitance ratio2.2
Nominal diode capacitance1.8 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.25 W
Certification statusNot Qualified
minimum quality factor1500
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2e-8 µA
Reverse test voltage25 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
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