MRF6S9045MBR1 datasheet, PDF - EEWORLD Datasheet

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MRF6S9045MBR1: Descriptionmosfet RF N-CH 28v 10w TO-272-2; Categorysemiconductor Discrete semiconductor; File Size779KB，18 Pages; ManufacturerFREESCALE (NXP)

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MRF6S9045MBR1 Overview

mosfet RF N-CH 28v 10w TO-272-2

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Freescale Semiconductor

Technical Data

MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration

PCN12895 for more details. MRF6S9045NBR1 no longer manufactured.

Document Number: MRF6S9045N

Rev. 4, 8/2008

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of

these devices make them ideal for large - signal, common - source amplifier

applications in 28 volt base station equipment.

•

Typical Single - Carrier N - CDMA Performance @ 880 MHz, V

= 28 Volts,

= 350 mA, P

out

= 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 22.7 dB

Drain Efficiency — 32%

ACPR @ 750 kHz Offset — - 47 dBc in 30 kHz Bandwidth

GSM EDGE Application

•

Typical GSM EDGE Performance: V

= 28 Volts, I

= 350 mA,

out

= 16 Watts Avg., Full Frequency Band (921 - 960 MHz)

Power Gain — 20 dB

Drain Efficiency — 46%

Spectral Regrowth @ 400 kHz Offset = - 62 dBc

Spectral Regrowth @ 600 kHz Offset = - 78 dBc

EVM — 1.5% rms

GSM Application

•

Typical GSM Performance: V

= 28 Volts, I

= 350 mA, P

out

= 45 Watts,

Full Frequency Band (921 - 960 MHz)

Power Gain — 20 dB

Drain Efficiency — 68%

•

Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW

Output Power

Features

•

Characterized with Series Equivalent Large - Signal Impedance Parameters

•

Integrated ESD Protection

•

225°C Capable Plastic Package

•

N Suffix Indicates Lead - Free Terminations. RoHS Compliant.

•

TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

•

TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

13 inch Reel.

MRF6S9045NR1

MRF6S9045NBR1

ARCHIVE INFORMATION

CASE 1265 - 09, STYLE 1

TO - 270- 2

PLASTIC

MRF6S9045NR1

CASE 1337 - 04, STYLE 1

TO - 272- 2

PLASTIC

MRF6S9045NBR1

Table 1. Maximum Ratings

Rating

Drain- Source Voltage

Gate- Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

Symbol

DSS

stg

Value

- 0.5, +68

- 0.5, + 12

- 65 to +150

150

225

Unit

Vdc

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

MRF6S9045NR1 MRF6S9045NBR1

RF Device Data

Freescale Semiconductor

ARCHIVE INFORMATION

880 MHz, 10 W AVG., 28 V

SINGLE N - CDMA

LATERAL N - CHANNEL

BROADBAND RF POWER MOSFETs

MRF6S9045MBR1 Related Products

	MRF6S9045MBR1	MRF6S9045MR1
Description	mosfet RF N-CH 28v 10w TO-272-2	mosfet RF N-CH 28v 10w TO-270-2

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