A Product Line of
Diodes Incorporated
ZTX855
150V NPN MEDIUM POWER TRANSISTOR IN E-LINE
Features
•
•
•
•
•
•
•
•
•
•
BV
CEO
> 150V
I
C
= 4A High Continuous Collector Current
I
CM
= 10A Peak Pulse Current
T
J
up to 200°C for High Temperature Operation
Low Saturation Voltage < 100mV @ 1A
P
D
= 1.2W Power dissipation
Complementary NPN Type: ZTX955
Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
Case: E-Line (TO-92 Compatible)
Case Material: molded plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.159 grams (approximate)
E-Line
(TO-92 Compatible)
Part Mark on
Rounded Face
C
C B E
Ejection Mark
on Flat Face
B
Bottom View
E
Flat Face View
Device Symbol
C B E
C
B
E
Rounded Face View
Pin-Out Configuration
Ordering Information
(Note 4)
Product
ZTX855STZ
ZTX855
Notes:
Marking
ZTX855
ZTX855
Package
E-Line
E-Line
Leads
Joggled
Straight
Quantity
2,000 taped per Ammo Box
4,000 loose in a Box
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZTX
855
ZTX855 = Product type Marking Code
Rounded Face View
ZTX855
Document Number DS33136 Rev. 4 - 2
1 of 7
www.diodes.com
May 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZTX855
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
250
150
6
4
10
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Lead (Note 7)
Operating and Storage Temperature Range
Symbol
P
D
P
D
R
Θ
JA
R
Θ
JA
R
Θ
JC
T
J,
T
STG
Value
1.58
1.2
150
110
50
-55 to +200
Unit
W
W
°C/W
°C/W
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a through-hole device mounted at the seating plane (2.5mm lead length) with the collector lead on 25mm x 25mm 1oz copper that is on a
single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on minimum recommended pad layout with 12mm lead length from the bottom of package to the board.
7. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZTX855
Document Number DS33136 Rev. 4 - 2
2 of 7
www.diodes.com
May 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZTX855
Thermal Characteristics and Derating Information
ZTX855
Document Number DS33136 Rev. 4 - 2
3 of 7
www.diodes.com
May 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZTX855
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cut-off Current
Collector-Emitter Cut-off Current
Emitter-Base Cut-off Current
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
DC Current Gain (Note 9)
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
R
≤
1kΩ
Min
250
250
150
6
−
−
−
−
−
−
100
100
35
−
−
−
Typ
375
375
180
8
−
−
−
20
35
60
210
960
880
200
200
55
10
90
22
66
2130
Max
−
−
−
−
50
1
50
1
10
40
60
100
260
1100
1000
−
300
−
−
−
−
−
Unit
V
V
V
V
nA
µA
nA
µA
nA
mV
mV
mV
I
CER
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Current Gain-Bandwidth Product (Note 9)
Output Capacitance (Note 9)
Switching Times
Notes:
f
T
C
obo
t
on
t
off
MHz
pF
ns
ns
Test Condition
I
C
= 100µA
I
C
= 1µA,R
B
≤1kΩ
I
C
= 1mA
I
E
= 100µA
V
CB
= 200V
V
CB
= 200V, @T
A
= +100°C
V
CB
= 200V
V
CB
= 200V, @T
A
= +100°C
V
EB
= 6V
I
C
= 100mA, I
B
= 5mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
I
C
= 4A, I
B
= 400mA
I
C
= 4A, I
B
= 400mA
I
C
= 4A, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 4A, V
CE
= 5V
I
C
= 10A, V
CE
= 5V
V
CE
= 10V, I
C
= 100mA
f = 50MHz
V
CB
= 20V, f = 1MHz
I
C
= 1A, V
CC
= 50V
I
B1
= -I
B2
= 100mA
9. Measured under pulsed conditions. Pulse width • 300µs. Duty cycle • 2%
ZTX855
Document Number DS33136 Rev. 4 - 2
4 of 7
www.diodes.com
May 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZTX855
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
ZTX855
Document Number DS33136 Rev. 4 - 2
5 of 7
www.diodes.com
May 2013
© Diodes Incorporated
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