MT42L512M32D4LL-25WT:A datasheet, PDF

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MT42L512M32D4LL-25WT:A: DescriptionDDR DRAM, 512MX32, CMOS, PBGA216, 12 X 12 MM, 0.80 MM HEIGHT, 0.40 MM PITCH, GREEN, FBGA-216; Categorystorage storage; File Size2MB，172 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT42L512M32D4LL-25WT:A Overview

DDR DRAM, 512MX32, CMOS, PBGA216, 12 X 12 MM, 0.80 MM HEIGHT, 0.40 MM PITCH, GREEN, FBGA-216

MT42L512M32D4LL-25WT:A Parametric

Parameter Name	Attribute value
Maker	Micron Technology
package instruction	VFBGA,
Reach Compliance Code	compliant
access mode	MULTI BANK PAGE BURST
Other features	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM
JESD-30 code	S-PBGA-B216
length	12 mm
memory density	17179869184 bit
Memory IC Type	DDR DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	216
word count	536870912 words
character code	512000000
Operating mode	SYNCHRONOUS
organize	512MX32
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Package shape	SQUARE
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Maximum seat height	0.8 mm
self refresh	YES
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Terminal form	BALL
Terminal pitch	0.4 mm
Terminal location	BOTTOM
width	12 mm
Base Number Matches	1

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4Gb: x16, x32 Mobile LPDDR2 SDRAM S4

Features

Mobile LPDDR2 SDRAM

MT42L256M16D1, MT42L128M32D1, MT42L256M32D2,

MT42L128M64D2, MT42L512M32D4, MT42L192M64D3,

MT42L256M64D4, MT42L384M32D3

Features

• Ultra low-voltage core and I/O power supplies

– V

DD2

= 1.14–1.30V

– V

DDCA

DDQ

= 1.14–1.30V

– V

DD1

= 1.70–1.95V

• Clock frequency range

– 533–10 MHz (data rate range: 1066–20 Mb/s/pin)

• Four-bit prefetch DDR architecture

• Eight internal banks for concurrent operation

• Multiplexed, double data rate, command/address

inputs; commands entered on every CK edge

• Bidirectional/differential data strobe per byte of

data (DQS/DQS#)

• Programmable READ and WRITE latencies (RL/WL)

• Programmable burst lengths: 4, 8, or 16

• Per-bank refresh for concurrent operation

• On-chip temperature sensor to control self refresh

rate

• Partial-array self refresh (PASR)

• Deep power-down mode (DPD)

• Selectable output drive strength (DS)

• Clock stop capability

• RoHS-compliant, “green” packaging

Table 1: Key Timing Parameters

Speed Clock Rate Data Rate

Grade

(MHz)

(Mb/s/pin)

-18

-25

-3

533

400

333

1066

800

667

RCD/

Options

Marking

Typical

• V

DD2

: 1.2V

• Configuration

– 32 Meg x 16 x 8 banks x 1 die

256M16

– 16 Meg x 32 x 8 banks x 1 die

128M32

– 16 Meg x 32 x 8 banks x 2 die

256M32

– 1 (16 Meg x 32 x 8 banks) + 2 (32

384M32

Meg x 16 x 8 banks)

– 32 Meg x 16 x 8 banks x 4 die

512M32

– 16 Meg x 32 x 8 banks x 2 die

128M64

– 16 Meg x 32 x 8 banks x 3 die

192M64

– 16 Meg x 32 x 8 banks x 4 die

256M64

• Device type

– LPDDR2-S4, 1 die in package

– LPDDR2-S4, 2 die in package

– LPDDR2-S4, 3 die in package

– LPDDR2-S4, 4 die in package

• FBGA “green” package

– 134-ball FBGA (10mm x

GU, GV

11.5mm)

– 168-ball FBGA (12mm x 12mm)

LF, LG

– 216-ball FBGA (12mm x 12mm) LH, LK, LL, LM,

– 220-ball FBGA (14mm x 14mm)

LD, MP

– 240-ball FBGA (14mm x 14mm)

– 253-ball FBGA (11mm x 11mm)

EU, EV

• Timing – cycle time

– 1.875ns @ RL = 8

-18

– 2.5ns @ RL = 6

-25

– 3.0ns @ RL = 5

-3

• Operating temperature range

– From –30°C to +85°C

– From –40°C to +105°C

• Revision

Note:

1. For Fast

RCD/

RP, contact factory.

PDF: 09005aef84427aab

4gb_mobile_lpddr2_s4_u80m.pdf - Rev. O 08/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

4Gb: x16, x32 Mobile LPDDR2 SDRAM S4

Features

Contents

General Description ....................................................................................................................................... 12

General Notes ............................................................................................................................................ 12

Specifications ........................................................................................................................................... 13

Package Block Diagrams ................................................................................................................................. 18

Package Dimensions ....................................................................................................................................... 24

Ball Assignments and Descriptions ................................................................................................................. 37

Functional Description ................................................................................................................................... 46

Power-Up ....................................................................................................................................................... 47

Initialization After RESET (Without Voltage Ramp) ...................................................................................... 49

Power-Off ....................................................................................................................................................... 49

Uncontrolled Power-Off .............................................................................................................................. 50

Mode Register Definition ................................................................................................................................ 50

Mode Register Assignments and Definitions ................................................................................................ 50

ACTIVATE Command ..................................................................................................................................... 61

8-Bank Device Operation ............................................................................................................................ 61

Read and Write Access Modes ......................................................................................................................... 62

Burst READ Command ................................................................................................................................... 62

READs Interrupted by a READ ..................................................................................................................... 69

Burst WRITE Command .................................................................................................................................. 69

WRITEs Interrupted by a WRITE ................................................................................................................. 72

BURST TERMINATE Command ...................................................................................................................... 72

Write Data Mask ............................................................................................................................................. 74

PRECHARGE Command ................................................................................................................................. 75

READ Burst Followed by PRECHARGE ......................................................................................................... 76

WRITE Burst Followed by PRECHARGE ....................................................................................................... 77

Auto Precharge ........................................................................................................................................... 78

READ Burst with Auto Precharge ................................................................................................................. 78

WRITE Burst with Auto Precharge ............................................................................................................... 79

REFRESH Command ...................................................................................................................................... 81

REFRESH Requirements ............................................................................................................................. 87

SELF REFRESH Operation ............................................................................................................................... 89

Partial-Array Self Refresh – Bank Masking .................................................................................................... 90

Partial-Array Self Refresh – Segment Masking .............................................................................................. 91

MODE REGISTER READ ................................................................................................................................. 92

Temperature Sensor ................................................................................................................................... 94

DQ Calibration ........................................................................................................................................... 96

MODE REGISTER WRITE Command ............................................................................................................... 98

MRW RESET Command .............................................................................................................................. 98

MRW ZQ Calibration Commands ................................................................................................................ 99

ZQ External Resistor Value, Tolerance, and Capacitive Loading .................................................................... 101

Power-Down ................................................................................................................................................. 101

Deep Power-Down ........................................................................................................................................ 108

Input Clock Frequency Changes and Stop Events ............................................................................................ 109

Input Clock Frequency Changes and Clock Stop with CKE LOW .................................................................. 109

Input Clock Frequency Changes and Clock Stop with CKE HIGH ................................................................. 110

NO OPERATION Command ........................................................................................................................... 110

Simplified Bus Interface State Diagram ....................................................................................................... 110

Truth Tables .................................................................................................................................................. 112

Electrical Specifications ................................................................................................................................. 120

Absolute Maximum Ratings ....................................................................................................................... 120

PDF: 09005aef84427aab

4gb_mobile_lpddr2_s4_u80m.pdf - Rev. O 08/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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