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ZTX560STOA

Description
transistor pnp 500v med E-line
Categorysemiconductor    Discrete semiconductor   
File Size112KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Environmental Compliance  
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ZTX560STOA Overview

transistor pnp 500v med E-line

ZTX560
E-LINE PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
FEATURES
Excellent h
FE
characterisristics up to I
C
=50mA
Low Saturation voltages
PARTMARKING
ZTX
560
PIN-OUT
E-LINE
VALUE
-500
-500
-5
-500
-150
1
-55 to +150
UNIT
V
V
V
mA
mA
W
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
Power dissipation
Operating and storage temperature range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Collector-base breakdown boltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn on voltage
Static forward current transfer ratio
SYMBOL
V
(BR)CBO
V
BR(CEO)
V
(BR)EBO
I
CBO
; I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
100
80
15 typ
60
8
110 typ.
1.5 typ.
MIN.
-500
-500
-5
-100
-100
-0.2
-0.5
-0.9
-0.9
300
300
MHz
pF
ns
s
MAX.
UNIT
V
V
V
nA
nA
V
V
V
V
CONDITIONS
I
C
=-100µA
I
C
=-10mA*
I
E
=-100µA
V
CB
=-500V; V
CE
=-500V
V
EB
=-5V
I
C
=-20mA,
I
C
=-50mA,
I
B
=-2mA*
I
B
=-10mA*
I
C
=-50mA, I
B
=-10mA*
I =-50mA, V
CE
=-10V*
C
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
V
CE
=-20V, I
C
=-10mA,
f=50MHz
V
CB
=-20V, f=1MHz
V
CE
=-100V, I
C
=-50mA,
I
B1
=-5mA, I
B2
=10mA
Transition frequency
Output capacitance
Switching times
f
T
C
obo
t
on
t
off
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle
2%
ISSUE 2 - SEPTEMBER 2006
1
SEMICONDUCTORS

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