BSP223 datasheet, PDF - EEWORLD Datasheet

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BSP223: DescriptionPower Field-Effect Transistor, 0.38A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size99KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSP223 Overview

Power Field-Effect Transistor, 0.38A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

BSP223 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Parts packaging code	SOT-223
package instruction	SOT-223, 4 PIN
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	130 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (Abs) (ID)	0.38 A
Maximum drain current (ID)	0.38 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.8 W
Maximum pulsed drain current (IDM)	1.52 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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Preliminary data

BSP 223

SIPMOS

Small-Signal Transistor

• N channel

• Enhancement mode

• Avalanche rated

•

GS(th)

= 2.1 ... 4.0 V

Pin 1

Pin 2

Pin 3

Pin 4

Type

600 V

0.38 A

DS(on)

Ω

Package

Marking

BSP 223

SOT-223

BSP 223

Electrical Characteristics,

= 25°C, unless otherwise specified

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

= 25 °C

0.38

DC drain current, pulsed

= 25 °C

Dpuls

1.52

Avalanche energy, single pulse

= 1.4 A,

= 50 V,

= 25

Ω

= 122 mH,

= 25 °C

130

tot

Gate source voltage

Power dissipation

= 25 °C

1.8

Semiconductor Group

25/09/1997

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