DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1853
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1853 is a switching device which can be
driven directly by a 4
-
V power source.
The
µ
PA1853 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
8
PACKAGE DRAWING (Unit : mm)
5
1
2, 3
4
5
6, 7
8
:Drain1
:Source1
:Gate1
:Gate2
:Source2
:Drain2
1.2 MAX.
1.0±0.05
0.25
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
FEATURES
•
Can be driven by a 4-V power source
•
Low on-state resistance
R
DS(on)1
= 85 mΩ MAX. (V
GS
= –10 V, I
D
= –1.5 A)
R
DS(on)2
= 152 mΩ MAX. (V
GS
= –4.5 V, I
D
= –1.5 A)
R
DS(on)3
= 180 mΩ MAX. (V
GS
= –4.0 V, I
D
= –1.5 A)
1
4
5
5
0.145 ±0.055
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
µ
PA1853GR-9JG
0.65
0.8 MAX.
0.10 M
0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
0.27
+0.03
–0.08
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
–30
–20/+5
V
V
A
A
W
°C
°C
Gate1
EQUIVALENT CIRCUIT
Drain1
Drain2
#
2.5
#
10
2.0
150
–55 to +150
Total Power Dissipation
Channel Temperature
Storage Temperature
Body
Diode
Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D12968EJ1V0DS00 (1st edition)
Date Published October 1999 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1997, 1999
µ
PA1853
5
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
TEST CONDITIONS
V
DS
= –30 V, V
GS
= 0 V
V
GS
=
#
20 V, V
DS
= 0 V
V
DS
= –10 V, I
D
= –1 mA
V
DS
= –10 V, I
D
= –1.5 A
V
GS
= –10 V, I
D
= –1.5 A
V
GS
= –4.5 V, I
D
= –1.5 A
V
GS
= –4.0 V, I
D
= –1.5 A
V
DS
= –10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= –10 V
I
D
= –1.5 A
V
GS(on)
= –10 V
R
G
= 10
Ω
V
DD
= –24 V
I
D
= –2.5 A
V
GS
= –10 V
I
F
= 2.5 A, V
GS
= 0 V
–1.0
1
–1.7
3.6
64
114
135
520
200
82
60
220
800
620
12
2
3
0.73
85
152
180
MIN.
TYP.
MAX.
–10
#
10
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
–2.5
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
R
G
= 10
Ω
V
DD
I
D
90 %
90 %
I
D
0 10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
V
GS
I
G
= 2 mA
V
GS(on)
90 %
V
GS
Wave Form
R
L
V
DD
0
10 %
PG.
50
Ω
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave Form
2
Data Sheet D12968EJ1V0DS00
µ
PA1853
5
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
FORWARD BIAS SAFE OPERATING AREA
−100
dT - Derating Factor - %
I
D
- Drain Current - A
−10
60
d
ite V)
I
D
(pulse)
Lim 10
)
on
=
−
S(
R
D
V
GS
I
D
(
DC
)
(@
PW
=1
10
ms
10
0m
s
DC
ms
−1
40
20
0
Single Pulse
Mounted on Ceramic
2
Substrate of 5000mm x 1.1mm
−0.01
P
D
(FET1) : P
D
(FET2) = 1:1
−0.1
30
60
90
120
T
A
- Ambient Temperature -
˚C
150
−0.1
−1.0
−10.0
−100.0
V
DS
- Drain to Source Voltage - V
−10
−8
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
V
GS
=
−10
V
−10
−1
I
D
- Drain Current - A
TRANSFER CHARACTERISTICS
V
DS
=
−10
V
I
D
- Drain Current - A
−
4.5 V
−6
−4
−2
0
0
−0.2
−0.4
−0.6
−0.8
−1
V
DS
- Drain to Source Voltage - V
−4.0
V
−0.1
−0.01
T
A
= 125 ˚C
75 ˚C
25 ˚C
−25
˚C
−0.001
−0.0001
0
−1.0
−2.0
−3.0
V
GS
- Gate to Source Voltage - V
−4.0
V
GS(off)
- Gate to Source Cut-off Voltage - V
−2
−1.8
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
DS
=
−10
V
I
D
=
−1
mA
100
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
V
DS
=
−10
V
−1.6
−1.4
−1.2
−1
−50
10
T
A
=
−25
˚C
25
˚C
75
˚C
125
˚C
1
0
50
100
150
0.1
−0.1
−1
−10
−100
T
ch
- Channel Temperature - ˚C
I
D
- Drain Current - A
Data Sheet D12968EJ1V0DS00
3
µ
PA1853
R
DS(on)
- Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
250
V
GS
=
−
4.0 V
200
T
A
= 125˚C
75˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
300
250
200
150
100
50
0
−0.1
−1
−10
−100
T
A
= 125˚C
75˚C
25˚C
−25˚C
V
GS
=
−4.5
V
150
25˚C
−25˚C
100
50
−
0.1
−
1
−
10
I
D
- Drain Current - A
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS (on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
V
GS
=
−10
V
T
A
= 125˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
I
D
=
−1.5
A
V
GS
=
−4.0
V
150
−4.5
V
100
−10
V
140
120
100
75˚C
80
25˚C
60
−
25˚C
40
20
−0.1
50
−1
−10
−100
0
−50
T
ch
0
I
D
- Drain Current - A
50
100
- Channel Temperature -˚C
150
R
DS (on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
I
D
=
−1.5
A
250
200
150
100
50
0
Ciss, Coss, Crss - Capacitance - pF
300
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
C
iss
100
C
oss
C
rss
0
−
5
−
10
10
−1
−10
V
DS
- Drain to Source Voltage - V
−100
−
15
−
20
V
GS
- Gate to Source Voltage - V
4
Data Sheet D12968EJ1V0DS00
µ
PA1853
SWITCHING CHARACTERISTICS
10000 V
DD
=
−10V
V
GS
(
on
) =
−10V
R
G
= 10Ω
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
V
GS
= 0 V
td
(on)
, tr, td
(off)
, tf - Swwitchig Time - ns
I
F
- Source to Drain Current - A
−10
1
1000
tf
td
(off)
tr
0.1
0.01
100
td
(on)
0.001
10
−0.1
−1
I
D
- Drain Current - A
0.0001
0.4
0.6
0.8
1
1.2
V
F(S-D)
- Source to Drain Voltage - V
DYNAMIC INPUT CHARACTERISTICS
−10
V
GS
- Gate to Source Voltage - V
I
D
=
-2.5
A
−8
−6
V
DD
=
-24V
−4
−2
0
0
2
4
6
8
Q
G
- Gate Charge - nC
10
12
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
62.5˚C/W
10
1
Mounted on Ceramic Substrate
of 5000mm
2
x 1.1mm
Single Pulse
P
D
(FET1) : P
D
(FET2) = 1:1
0.1
1m
10m
100m
1
10
100
1000
PW - Pulse Width - S
Data Sheet D12968EJ1V0DS00
5
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